Schottky-barrier height and electronic structure of the Si interface with metal silicides:CoSi2,NiSi2, andYSi2

1994 ◽  
Vol 50 (12) ◽  
pp. 8681-8698 ◽  
Author(s):  
Hideaki Fujitani ◽  
Setsuro Asano
Keyword(s):  
Electronic Structure ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Electronic Structure of Epitaxial Silicon Interfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
Hideaki Fujitani ◽  
Setsuro Asano
Keyword(s):  
Electronic Structure ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Atomic Structure ◽  
Schottky Barrier Height ◽  
Orbital Method ◽  
Epitaxial Silicon ◽  
Atomic Sphere ◽  
Sphere Approximation ◽  
Atomic Sphere Approximation

ABSTRACTUsing the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA), we studied the electronic structure of the Si(111) interface for four different materials: CaF2, NiSi2, CoSi2, and YSi2. We examined how the interface states and Schottky barrier height depend on the interface atomic structure.

Theoretical investigation of Pt monosilicide and several germanides: electronic structure, surface energetics, and work functions

2006 ◽  
Vol 980 ◽  
Author(s):  
Manish K. Niranjan ◽  
Leonard Kleinman ◽  
Alexander A. Demkov
Keyword(s):  
Electronic Structure ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Density Functional ◽  
Schottky Barrier Height ◽  
Cmos Technology ◽  
Growth Conditions ◽  
Structure Surface ◽  
Work Functions ◽  
P Type

AbstractWe present a theoretical study of the electronic structure, surface energies and work functions of orthorhombic Pt monosilicide and germanides of Pt, Ni, Y and Hf within the framework of density functional theory (DFT). Our calculated bulk structures are within 1-2% of reported experimental values. Calculated work functsions for the (001) surfaces of PtSi, NiGe and PtGe are 5.12, 4.57 and 4.83 eV, respectively, suggesting that these metals and their alloys can be used as self-aligned contacts to p-type silicon and germanium. Work functions for Y and Hf germanides range from 2.4 to 4.3 eV making them a possible n-type contact material. In addition, we also report an ab-initio calculation of the Schottky-barrier height at the Si(001)/PtSi(001) interface. The p-type Schottky barrier height of 0.28 eV is found in good agreement with predictions of a simple metal induced gap states (MIGS) theory and available experiment. This low barrier suggests PtSi as a low contact resistance junction metal for silicon CMOS technology. We identify the growth conditions necessary to stabilize this orientation.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

Sign in / Sign up

Export Citation Format

Share Document