Pulsed-light soaking of hydrogenated amorphous silicon

1994 ◽  
Vol 50 (16) ◽  
pp. 11592-11605 ◽  
Author(s):  
M. Stutzmann ◽  
M. C. Rossi ◽  
M. S. Brandt
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Pulsed Light ◽  
Hydrogenated Amorphous

Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soaking

1992 ◽  
Vol 61 (15) ◽  
pp. 1817-1819 ◽  
Author(s):  
Nobuhiro Hata ◽  
Gautam Ganguly ◽  
Sigurd Wagner ◽  
Akihisa Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Pulsed Light ◽  
Hydrogenated Amorphous

Pulsed-Light-Induced Metastable Defect Creation in Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Jong-Hwan Yoon ◽  
H. L. Kim
Keyword(s):  
Time Dependence ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Pulsed Light ◽  
Illumination Time ◽  
Defect Creation ◽  
Annealing Rate ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTWe report the results of a study of metastable defect creation by pulsed light soaking in undoped hydrogenated amorphous silicon (a-Si:H). An illumination time dependence of the defect density, a saturated defect density, and light-induced annealing under pulsed laser light have been studied. Measurements show approximately a t1/2 time-dependence of the defect creation, which is independent of light intensity. It is observed that the saturation value of the defect density is about one order of magnitude higher than by cw illumination in device quality films. It has been suggested that these results would be due to the difference in the light-induced defect annealing rate between cw and pulsed lights, in which it is found that the light-induced annealing rate by pulsed light is lower than by cw light.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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