Investigation of excitonic saturation by time-resolved circular dichroism in GaAs-AlxGa1−xAs multiple quantum wells

1994 ◽  
Vol 49 (24) ◽  
pp. 17160-17169 ◽  
Author(s):  
M. J. Snelling ◽  
P. Perozzo ◽  
D. C. Hutchings ◽  
I. Galbraith ◽  
A. Miller
Keyword(s):  
Circular Dichroism ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Circular Dichroïsm

Time resolved inter-subband relaxation in GaAs/GaAlAs multiple quantum wells

1989 ◽  
Vol 32 (12) ◽  
pp. 1869-1873 ◽  
Author(s):  
J.A. Levenson ◽  
G. Dolique ◽  
J.L. Oudar ◽  
I. Abram
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

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