Temperature dependence of the electron-spin resonance in nitrogen-rich amorphous silicon nitride

1994 ◽  
Vol 49 (19) ◽  
pp. 13420-13422 ◽  
Author(s):  
D. Chen ◽  
J. M. Viner ◽  
P. C. Taylor ◽  
J. Kanicki
Keyword(s):  
Electron Spin Resonance ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Amorphous Silicon Nitride ◽  
Spin Resonance

Light-Induced Electron Spin Resonance in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride: Photo-Production and Photo-Bleaching

1990 ◽  
Vol 192 ◽  
Author(s):  
E. D. Tober ◽  
M. S. Crowder ◽  
J. Janicki
Keyword(s):  
Electron Spin Resonance ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Monochromatic Light ◽  
Resonance Spectroscopy ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Spin Resonance ◽  
Photo Production

ABSTRACTElectron spin resonance spectroscopy is used to monitor the light-induced, paramagnetic (neutral) defect density in gate-quality nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H) thin films. A new phenomenon has been observed in which the light-induced electron spin resonance (LESR) signal can be reduced (photo-bleached) by re-illuminating with monochromatic light. The extent to which the LESR signal is bleached depends strongly upon the incident photon energy used for re-illumination. Photo-bleaching as well as the photo-production of the LESR signal follow a stretched exponential dependence upon illumination time.

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