scholarly journals Density of states of disordered systems

1994 ◽  
Vol 49 (19) ◽  
pp. 13377-13382 ◽  
Author(s):  
M. C. W. van Rossum ◽  
Th. M. Nieuwenhuizen ◽  
E. Hofstetter ◽  
M. Schreiber
2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.


1983 ◽  
Vol 27 (12) ◽  
pp. 7379-7385 ◽  
Author(s):  
Ana María Llois ◽  
Mariana Weissmann ◽  
Norah V. Cohan

2010 ◽  
Vol 24 (12n13) ◽  
pp. 1811-1822 ◽  
Author(s):  
Franz J. Wegner

The density of states of disordered systems in the Wigner–Dyson classes approaches some finite non-zero value at the mobility edge, whereas the density of states in systems of the chiral and Bogolubov-de Gennes classes shows a divergent or vanishing behavior in the band centre. Such types of behavior were classified as homogeneous and inhomogeneous fixed point ensembles within a real-space renormalization group approach. For the latter ensembles, the scaling law µ = dν-1 was derived for the power laws of the density of states ρ ∝ |E|µ and of the localization length ξ ∝ |E|-ν. This prediction from 1976 is checked against explicit results obtained meanwhile.


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