Effect of geometry on the critical currents of thin films

1994 ◽  
Vol 49 (2) ◽  
pp. 1274-1288 ◽  
Author(s):  
G. Stejic ◽  
A. Gurevich ◽  
E. Kadyrov ◽  
D. Christen ◽  
R. Joynt ◽  
...  
Keyword(s):  
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).


Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.


1994 ◽  
Vol 235-240 ◽  
pp. 3095-3096
Author(s):  
F. Ichikawa ◽  
T. Nishizaki ◽  
K. Yamabe ◽  
Y. Yamasaki ◽  
T. Fukami ◽  
...  

Author(s):  
X. K. Wang ◽  
D. X. Li ◽  
S. N. Song ◽  
J. Q. Zheng ◽  
R. P. H. Chang ◽  
...  

1993 ◽  
Vol 214 (1-2) ◽  
pp. 127-132 ◽  
Author(s):  
Yu.V. Gomeniuk ◽  
V.Z. Lozovski ◽  
V.S. Lysenko ◽  
I.P. Tyagulski

1993 ◽  
Vol 204 (3-4) ◽  
pp. 305-314 ◽  
Author(s):  
Terukazu Nishizaki ◽  
Fusao Ichikawa ◽  
Takeshi Fukami ◽  
Takafumi Aomine ◽  
Takahito Terashima ◽  
...  

1989 ◽  
Vol 62 (17) ◽  
pp. 2044-2047 ◽  
Author(s):  
J. D. Hettinger ◽  
A. G. Swanson ◽  
W. J. Skocpol ◽  
J. S. Brooks ◽  
J. M. Graybeal ◽  
...  

1996 ◽  
Vol 46 (S3) ◽  
pp. 1307-1308
Author(s):  
J. C. Martínez ◽  
B. Stäuble-Pümpin ◽  
G. Doornbos ◽  
R. Surdeanu ◽  
B. Dam ◽  
...  

1998 ◽  
Vol 299 (3-4) ◽  
pp. 215-230 ◽  
Author(s):  
Ch. Jooss ◽  
R. Warthmann ◽  
A. Forkl ◽  
H. Kronmüller

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