Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field inIn0.53Ga0.47As/InP quantum wells

1993 ◽  
Vol 48 (12) ◽  
pp. 8848-8856 ◽  
Author(s):  
Mitsuru Sugawara ◽  
Niroh Okazaki ◽  
Takuya Fujii ◽  
Susumu Yamazaki
2018 ◽  
Vol 60 (8) ◽  
pp. 1503
Author(s):  
Е.Л. Ивченко

AbstractExperimental and theoretical studies of circular polarization of photoluminescence of excitons (MCPL) in semiconductors placed in an external magnetic field are reviewed. The advantage of the MCPL method is its relative simplicity. In particular, it does not require spectral resolution of the Zeeman sublevels of an exciton and may be applied to a wide class of objects having broad photoluminescence spectral lines or bands: in bulk semiconductors with excitons localized on the defects of the crystal lattice and composition fluctuations, in structures with quantum wells and quantum dots of types I and II, in two-dimensional transition metals dichalcogenides and quantum microcavities. The basic mechanisms of the magnetic circular polarization of luminescence are considered. It is shown that either known mechanisms should be modified or additional mechanisms of the MCPL should be developed to describe the polarized photoluminescence in newly invented nanosystems.


2007 ◽  
Vol 21 (08n09) ◽  
pp. 1563-1567 ◽  
Author(s):  
ALEXANDER B. DZYUBENKO ◽  
DIANA A. COSMA ◽  
ANDREY Yu. SIVACHENKO

We consider eigenstates and magneto-optical transitions of free and donor-bound spin-singlet and spin-triplet charged magnetoexcitons in quasi-two-dimensional quantum wells. We show that the bright singlet state remains always bound while spin-triplet dark and bright states become unbound when the distance to the donor ion becomes smaller than certain critical values, which depend on the magnetic field strength. We demonstrate that main magneto-photoluminescence lines of free and donor-bound charged excitons exhibit very similar features. However, shake-up processes in photoluminescence of free trions are strictly prohibited. Therefore, shake-up transitions are distinct features indicating that symmetry-breaking mechanisms are present in the system.


1993 ◽  
Vol 07 (19) ◽  
pp. 3435-3447 ◽  
Author(s):  
YURY M. VILK ◽  
ANDREI E. RUCKENSTEIN ◽  
STEFAN SCHMITT-RINK

We report calculations of the luminescence spectra of doped quantum wells in a perpendicular magnetic field. We use the variational Hartree-Fock approximation and include Coulomb coupling of different Landau levels to all orders. In the case of localized holes we obtain multiple excitonic peaks with an oscillator strength which increases towards the chemical potential, in good agreement with recent experiments.


2013 ◽  
Vol 667 ◽  
pp. 1-9 ◽  
Author(s):  
Keshav N. Shrivastava

Abstract. The 30 nm wide quantum wells on a 4x4 mm2 piece of GaAs/AlGaAs are formed when the layers of GaAs are deposited on AlGaAs films. The two-dimensional density of electrons is 3x1011 cm-2 and the mobility is 32x106 cm2/Vs. In such a sample the Hall resistivity as a function of magnetic field is not a linear function. Hence a suitable theory to understand the Hall effect is formulated. We find that there are phase transitions as a function of temperature. There are lots of fractions of charge which are explained on the basis of spin and orbital angular momentum of the electron. The nano meter size films of graphite also show that the Hall resistivity is non-linear and shows steps as a function of magnetic field. We make an effort to understand the steps in the Hall effect resistivity of graphite with quantum wells formed on the surface. It is found that the fractions are in four categories, (i) the principal fractions which are determined by spin and orbital angular momenta, (ii) the resonances which occur at the difference between two values such as =1-2, (iii) two-particle states which occur at the sum of the two frequencies and (iv) there are clusters of electrons localized in some areas of the sample. The spin in the clusters is polarized so that it becomes NS which is not 1/2 but depends on the number N, of electrons in a cluster.


2015 ◽  
Vol 25 (2) ◽  
pp. 125
Author(s):  
Nguyen Quoc Khanh ◽  
Mai Thanh Huyen

We investigate correlation and magnetic field effects on the mobility and resistivity of a quasi-two-dimensional electron gas in an InP/In\(_{1 - x}\)Ga\(_{x}\)As/InP quantum well at arbitrary temperatures. We study the dependence of the mobility and resistivity on the carrier density, magnetic field, layer thickness and temperature for alloy disorder and impurity scattering using different approximations for the local-field correction. Multiple scattering effects and discuss the possibility of a metal-insulator transition, which might happen at low density for unpolarized and fully polarized electron gas are also considered.


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