Dynamics and phase transitions in crystals and thin layers with dipolar interactions

1993 ◽  
Vol 48 (8) ◽  
pp. 5505-5514
Author(s):  
P. Zieliński ◽  
K. Żabińska
Keyword(s):  
Phase Transitions ◽  
Thin Layers ◽  
Dipolar Interactions

Magnetic phase transitions, anisotropic susceptibility and dipolar interactions in antiferromagnetic MnNb2O6

1976 ◽  
Vol 1 (4) ◽  
pp. 320-325 ◽  
Author(s):  
O.V. Nielsen ◽  
T. Johansson ◽  
L.M. Holmes ◽  
G.J. Cock ◽  
L.W. Roeland ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Magnetic Phase ◽  
Magnetic Phase Transitions ◽  
Dipolar Interactions

Investigation of Phase Transitions in Stacked GeTe/SnTe and Ge2Se3/SnTe Chalcogenide Films

2011 ◽  
Vol 687 ◽  
pp. 677-683 ◽  
Author(s):  
Fei Ming Bai ◽  
Huai Wu Zhang ◽  
Surendra Gupta ◽  
Santosh Kurinec
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Phase Transitions ◽  
Phase Change Memory ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Area Detector ◽  
Memory Applications ◽  
Change Memory

Phase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe thin layers for potential phase-change memory applications have been investigated by X-ray diffraction using an area detector system and by scanning electron microscopy. The as-deposited underlying GeTe or Ge2Se3 layer is amorphous, whereas the top SnTe layer is crystalline. In GeTe/SnTe stack, the crystallization of GeTe phase occurs near 170°C, and upon further heating, GeTe phase disappears, followed by the formation of rocksalt-structured GexSn1-xTe solid solution. In Ge2Se3/SnTe stack, the phase transition starts with the separation of SnSe phase due to the migration of Sn ions into the Ge2Se3 layer. The migration of Sn ions and the formation of SnSe are believed to facilitate the crystallization of Ge2Se3 solid solution at ~360°C, which is much lower than the crystallization temperature of Ge2Se3, therefore consuming less power during the phase transition.

scholarly journals Phase transitions in multiferroic BiFeO3crystals, thin-layers, and ceramics: enduring potential for a single phase, room-temperature magnetoelectric ‘holy grail’

2006 ◽  
Vol 79 (12) ◽  
pp. 1019-1042 ◽  
Author(s):  
A. M. Kadomtseva ◽  
Yu. F. Popov ◽  
A. P. Pyatakov ◽  
G. P. Vorob’ev ◽  
A. K. Zvezdin ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Room Temperature ◽  
Single Phase ◽  
Thin Layers ◽  
Holy Grail

Pseudopartial Grain Boundary Wetting: Key to the Thin Intergranular Layers

2013 ◽  
Vol 333 ◽  
pp. 175-192 ◽  
Author(s):  
Boris B. Straumal ◽  
Alexey Rodin ◽  
A.E. Shotanov ◽  
Alexander B. Straumal ◽  
Olga A. Kogtenkova ◽  
...  
Keyword(s):  
Contact Angle ◽  
Phase Transitions ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Thin Layers ◽  
Second Phase ◽  
Triple Junctions ◽  
Complete Wetting ◽  
Grain Boundary Wetting

The thin layers of a second phase (also called complexions) in grain boundaries (GB) and triple junctions (TJs) are more and more frequently observed in polycrystals. The prewetting (or premelting) phase transitions were the first phenomena proposed to explain their existence. The deficit of the wetting phase in case of complete wetting can also lead to the formation of thin GB and TJ phases. However, only the phenomenon of pseudopartial (or pseudoincomplete, or constrained complete) wetting permitted to explain, how the thin GB film can exist in the equilibrium with GB lenses of a second phase with non-zero contact angle.

Liquid-crystal phase transitions of thin layers: A photothermal analysis

1991 ◽  
Vol 44 (8) ◽  
pp. 5080-5086 ◽  
Author(s):  
A. Hadj-Sahraoui ◽  
G. Louis ◽  
B. Mangeot ◽  
P. Peretti ◽  
J. Billard
Keyword(s):  
Phase Transitions ◽  
Liquid Crystal ◽  
Thin Layers ◽  
Crystal Phase ◽  
Liquid Crystal Phase
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