scholarly journals Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center

1993 ◽  
Vol 48 (19) ◽  
pp. 14301-14308 ◽  
Author(s):  
Jürgen Faul ◽  
Georg Neuhold ◽  
Lothar Ley ◽  
Jordi Fraxedas ◽  
Stefan Zollner ◽  
...  
Keyword(s):  
Conduction Band ◽  
Brillouin Zone ◽  
Brillouin Zone Center

Infrared dielectric functions and Brillouin zone center phonons of α−Ga2O3 compared to α - Al2O3

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Megan Stokey ◽  
Rafał Korlacki ◽  
Matthew Hilfiker ◽  
Sean Knight ◽  
Steffen Richter ◽  
...  
Keyword(s):  
Brillouin Zone ◽  
Α Al2o3 ◽  
Brillouin Zone Center

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

scholarly journals Brillouin zone center phonon modes in ZnGa2O4

2020 ◽  
Vol 117 (5) ◽  
pp. 052104 ◽  
Author(s):  
Megan Stokey ◽  
Rafał Korlacki ◽  
Sean Knight ◽  
Matthew Hilfiker ◽  
Zbigniew Galazka ◽  
...  
Keyword(s):  
Brillouin Zone ◽  
Phonon Modes ◽  
Brillouin Zone Center

Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption

1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Emission Spectra ◽  
Partial Density ◽  
High Symmetry ◽  
X Ray ◽  
X Ray Absorption

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.

Observation of a Thermodynamic Distinction Between Brillouin Zone Center and Boundary Exciton States in MnF2

1968 ◽  
Vol 21 (15) ◽  
pp. 1067-1070 ◽  
Author(s):  
R. E. Dietz ◽  
A. E. Meixner ◽  
H. J. Guggenheim ◽  
A. Misetich
Keyword(s):  
Brillouin Zone ◽  
Brillouin Zone Center

Lattice Dynamical Model for Graphite-Bromine Intercalation Compounds

1982 ◽  
Vol 20 ◽  
Author(s):  
R. Al-Jishi ◽  
G. Dresselhaus
Keyword(s):  
Brillouin Zone ◽  
High Frequency ◽  
Low Frequency ◽  
Unit Cell ◽  
Intercalation Compounds ◽  
Dynamical Model ◽  
Von Karman ◽  
Zone Folding ◽  
Von Kármán ◽  
Brillouin Zone Center

ABSTRACTA Born-von Kármán lattice dynamical model for the graphite Br2 intercalation compounds is presented. The low frequency bromine branches are calculated using a commensurate (√3 × √13)R(30°, 13.9°) unit cell with two Br2 molecules/unit cell. In-plane zone folding is used to calculate the high frequency graphitic modes at the Brillouin zone center.

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