Critical behavior of the density of states at the metal-insulator transition

1993 ◽  
Vol 48 (19) ◽  
pp. 14072-14079 ◽  
Author(s):  
D. Belitz ◽  
T. R. Kirkpatrick
Keyword(s):  
Density Of States ◽  
Critical Behavior ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Critical behavior of transport and magnetotransport in a 2D electron system in Si near the metal-insulator transition

JETP Letters ◽  
2007 ◽  
Vol 84 (12) ◽  
pp. 662-666 ◽  
Author(s):  
D. A. Knyazev ◽  
O. E. Omel’yanovskii ◽  
V. M. Pudalov ◽  
I. S. Burmistrov
Keyword(s):  
Critical Behavior ◽  
Electron System ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Thermodynamic Density of States of Two-Dimensional GaAs Systems near the Apparent Metal-Insulator Transition

2006 ◽  
Vol 96 (21) ◽  
Author(s):  
G. Allison ◽  
E. A. Galaktionov ◽  
A. K. Savchenko ◽  
S. S. Safonov ◽  
M. M. Fogler ◽  
...  
Keyword(s):  
Density Of States ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

Critical behavior of the thermopower near the metal-insulator transition

1991 ◽  
Vol 43 (13) ◽  
pp. 11088-11092 ◽  
Author(s):  
M. Fabrizio ◽  
C. Castellani ◽  
G. Strinati
Keyword(s):  
Critical Behavior ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Hopping Conduction Near the Metal-Insulator Transition in CdMnTe:In and Evidence for a Magnetic Hard Gap in the Density of States

1994 ◽  
Vol 08 (07) ◽  
pp. 905-912 ◽  
Author(s):  
I. Terry ◽  
T. Penney ◽  
S. von Molnár ◽  
P. Becla
Keyword(s):  
Carrier Concentration ◽  
Density Of States ◽  
Low Temperatures ◽  
Localization Length ◽  
Insulator Transition ◽  
Variable Range Hopping ◽  
Coulomb Interactions ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Magnetic Polarons

A series of resistivity curves is obtained as a function carrier concentration in just one sample of the dilute magnetic persistent photoconductor Cd0.91Mn0.09Te:In. The measurements, made at carrier concentrations approaching the metal-insulator transition, reveal a cross-over from an exp(To/T)1/2 dependence to an exp(EH/T) form when lowering temperature. The exp(To/T)1/2 dependence is characteristic of variable range hopping in the presence of Coulomb interactions, while the energy EH in the activated form is associated with a hard gap in the density of states that is magnetic in origin. All the data are shown to scale onto a single curve. The localization length. ξ, is found to have the same critical dependence on carrier concentration as that of the measured dielectric constant, κ, when approaching the metal-insulator transition. The temperature dependence of the resistivity is interpreted in terms of the orientation of Mn spins by carriers due to the s-d exchange interaction (the formation of magnetic polarons). This model can also account for the large positive and negative magnetoresistance observed in Cd0.91Mn0.09Te:In at low temperatures.

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