Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures

1993 ◽  
Vol 48 (15) ◽  
pp. 11062-11066 ◽  
Author(s):  
S. Fafard ◽  
E. Fortin ◽  
J. L. Merz
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Excitation Intensity ◽  
Single Quantum ◽  
Photoluminescence Quenching ◽  
Single Quantum Well ◽  
Field Screening ◽  
Quantum Well Structures

Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

2000 ◽  
Vol 27 (1) ◽  
pp. 39-51 ◽  
Author(s):  
L.J Olafsen ◽  
T Daniels-Race ◽  
R.E Kendall ◽  
S.W Teitsworth
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Field Bias

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Infrared absorption in HgCdTe/CdTe single quantum well structures

1993 ◽  
Vol 8 (1S) ◽  
pp. S296-S299 ◽  
Author(s):  
R Sizmann ◽  
P Helgesen ◽  
H Steen ◽  
T Skauli ◽  
T Colin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Absorption ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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