Specific heat for a strong-coupling superconductor with logarithmic electronic density of states

1993 ◽  
Vol 47 (14) ◽  
pp. 9029-9034 ◽  
Author(s):  
M. Mansor ◽  
J. P. Carbotte
Keyword(s):  
Specific Heat ◽  
Strong Coupling ◽  
Density Of States ◽  
Electronic Density ◽  
Electronic Density Of States ◽  
Strong Coupling Superconductor

Free energy formula for a strong coupling superconductor with energy dependent electronic density of states

1983 ◽  
Vol 61 (6) ◽  
pp. 872-887 ◽  
Author(s):  
B. Mitrovic ◽  
J. P. Carbotte
Keyword(s):  
Free Energy ◽  
Density Of States ◽  
Impurity Scattering ◽  
Energy Difference ◽  
Critical Magnetic Field ◽  
Half Width ◽  
Electronic Density ◽  
Electronic Density Of States ◽  
Strong Coupling Superconductor ◽  
Energy Dependent

Generalized expressions for the free energy difference between normal and superconducting states are derived for the case of an energy dependent (ED) electronic density of states (EDOS) with normal and paramagnetic impurity scattering included. The derivation starts from the Eliashberg expression for the grand thermodynamic potential and ends in explicit formulas for the case of a symmetric Lorentzian model EDOS. Some numerical results are given for the critical magnetic field deviation function and the ratio 2Δ0/kBTc of the Δ0 to the critical temperature Tc. For a peak at the Fermi energy of half width less than the Debye energy (ωD), the modified Eliashberg theory is needed to describe its effect on the thermodynamic properties, whereas for a half width greater than ωD, the corrections to a flat approximation are small.

Transport and Low Temperature Specific Heat Measurements of CrSi2 Single Crystals

1995 ◽  
Vol 402 ◽  
Author(s):  
J. C. Lasjaunias ◽  
U. Gottlieb ◽  
O. Laborde ◽  
O. Thomas ◽  
R. Madar
Keyword(s):  
Low Temperature ◽  
Specific Heat ◽  
Single Crystals ◽  
Density Of States ◽  
Hall Coefficient ◽  
Hole Concentration ◽  
Electronic Density ◽  
Electronic Density Of States ◽  
Low Temperature Specific Heat

AbstractWe have measured the Hall coefficient and the resistivity of single crystals of CrSi2. This compound crystallises in the hexagonal C40 structure and is generally reported as a semiconductor with a gap of around 0.35 eV. The resistivity is large, several hundreds of μΩ.cm and exhibits a metallic behaviour. RH leads to a hole concentration of 8.5×1026 m−3 at 300K.The specific heat at low temperature (0.7 K < T < 8 K ) can be describe as the sum of an electronic (γΓ) and a phonon (βT3) contribution. The analysis of the data leads to θD = 556 K and to an electronic density of states which is only two times smaller than those obtained for the metallic parent compounds VSi2, NbSi2 and TaSi2. This result questions the semiconducting nature of the chromium disilicide.

Search for hybridization gap in the electronic density of states in CeNiSb

1996 ◽  
Vol 79 (8) ◽  
pp. 6367 ◽  
Author(s):  
Latika Menon ◽  
S. K. Dhar ◽  
S. K. Malik ◽  
W. B. Yelon
Keyword(s):  
Density Of States ◽  
Electronic Density ◽  
Electronic Density Of States

STM study of the electronic density of states in the superconducting phase of Bi2Sr2CaCu2O8

1992 ◽  
Vol 82 (3) ◽  
pp. 171-175 ◽  
Author(s):  
Koichi Ichimura ◽  
Kazushige Nomura ◽  
Fujio Minami ◽  
Shunji Takekawa
Keyword(s):  
Density Of States ◽  
Superconducting Phase ◽  
Electronic Density ◽  
Electronic Density Of States

Electronic density of states of YMn2Hx compounds

2007 ◽  
Vol 442 (1-2) ◽  
pp. 368-371 ◽  
Author(s):  
S. Osuchowski ◽  
H. Figiel ◽  
A. Paja
Keyword(s):  
Density Of States ◽  
Electronic Density ◽  
Electronic Density Of States
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