Optical phonons and electron-phonon interaction in quantum wires

1993 ◽  
Vol 47 (12) ◽  
pp. 7602-7605 ◽  
Author(s):  
F. Comas ◽  
C. Trallero-Giner ◽  
A. Cantarero
2002 ◽  
Vol 81 (4) ◽  
pp. 727-729 ◽  
Author(s):  
T. Sugaya ◽  
J. P. Bird ◽  
D. K. Ferry ◽  
A. Sergeev ◽  
V. Mitin ◽  
...  

Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.


1995 ◽  
Vol 29 (6) ◽  
pp. 481-487 ◽  
Author(s):  
J Wróbel ◽  
T Brandes ◽  
F Kuchar ◽  
B Kramer ◽  
K Ismail ◽  
...  

2004 ◽  
Vol 18 (01) ◽  
pp. 53-61 ◽  
Author(s):  
YOU-BIN YU ◽  
KANG-XIAN GUO

The influence of electron–phonon interaction on third-harmonic generation in cylindrical quantum wires are investigated. The third-harmonic generation coefficient is obtained using compact-density-matrix approach and iterative method, and the numerical results are presented for GaAs cylindrical quantum wires. The results show that the third-harmonic generation coefficient is greatly enhanced after taking into consideration the influence of electron–phonon interaction. It is about thirty times larger than that obtained by just considering electron states when electron–phonon resonance is met.


2004 ◽  
Vol 18 (22) ◽  
pp. 2991-2999 ◽  
Author(s):  
FENG-QI ZHAO ◽  
ZI-ZHENG GUO

The free polaron energy levels in finite GaAs / Al x Ga 1-x As parabolic quantum wells have been investigated by a modified variational method. The effect of the electric field, the electron-phonon interaction including the longitudinal optical phonons and the four branches of interface optical phonons, and the effect of spatial dependent effective mass have been considered in the calculation. The dependence of the energies of free polarons on the alloy composition x is given. The numerical results for finite GaAs / Al x Ga 1-x As parabolic quantum wells are obtained and discussed. The results show that the effect of the electric field and the interface optical phonons as well as the longitudinal optical phonons on the energy levels is obvious. One can find that the effect of the spatially dependent effective masses on the energy levels in finite parabolic quantum wells is considerable except for large well width. Thus, the electron-phonon interaction and the effect of the spatially dependent effective mass should not be neglected for the study of the electron state problem in finite parabolic quantum wells.


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