Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon

1993 ◽  
Vol 47 (12) ◽  
pp. 7013-7024 ◽  
Author(s):  
J. Isoya ◽  
S. Yamasaki ◽  
H. Okushi ◽  
A. Matsuda ◽  
K. Tanaka
Keyword(s):  
Amorphous Silicon ◽  
Electron Spin ◽  
Spin Echo ◽  
Electron Spin Echo ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bonds ◽  
Hydrogen Atoms ◽  
Hydrogenated Amorphous ◽  
Envelope Modulation

Pulsed Esr Study of Light-Induced Metastable Defects in 17O and 13C Incorporated a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Yamasaki ◽  
T. Umeda ◽  
J. Isoya ◽  
A. Matsuda ◽  
K. Tanaka
Keyword(s):  
Electron Spin ◽  
Spin Echo ◽  
Double Resonance ◽  
Electron Spin Echo ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bonds ◽  
Electron Nuclear Double Resonance ◽  
Spin Resonance ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon (a-Si:H) samples containing 17O (3 x 1019 cm-3, nuclear spin, I, = 5/2) and 13C (3 - 4 x 1017cm-3, I = 1/2) isotope impurities were used in the detailed pulsed electron spin resonance (ESR) and pulsed electron-nuclear double resonance (ENDOR) measurements to obtain information on the role of O and C impurities in lightinduced metastable dangling bonds in a-Si:H. No hyperfine structure related to 17O and 13C atoms was observed in echo detected ESR, electron spin echo envelope modulation (ESEEM) of pulsed ESR as well as pulsed ENDOR (Davies and Mims sequences), which suggests that O and C impurities are not directly involved in the formation of light-induced dangling bonds.

Scanning Tunnelling Microscopy Study of the Growth Mechanism for Hydrogenated Amorphous Silicon Produced by Plasma Enhanced Chemical Vapour Deposition

1998 ◽  
Vol 507 ◽  
Author(s):  
A.J. Flewitt ◽  
W.I. Milne ◽  
J. Robertson ◽  
A.W. Stephenson ◽  
M.E. Welland
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapour ◽  
Dangling Bonds ◽  
Scanning Tunnelling Microscope ◽  
Hydrogen Atoms ◽  
Scanning Tunnelling ◽  
Hydrogenated Amorphous

ABSTRACTThin films of hydrogenated amorphous silicon (a-Si:H) have been deposited by plasma-enhanced chemical vapour deposition (PECVD), and the resulting topography measured in-situ on a nanometre scale using a scanning tunnelling microscope (STM). An island structure is observed on the surface of device quality a-Si:H, which can be quantitatively analysed using a one dimensional Fourier transform of the topography. Results suggest that deposition is limited by the creation of dangling bonds on the a-Si:H surface and not by the surface transport of SiH 3 radicals at the deposition temperature (598 K). Island nucleation takes place through the abstraction of hydrogen atoms from the a-Si:H surface by plasma etching and the subsequent attachment of an SiH 3 radicals to the available sites. A thermally activated hydrogen effusion process around the edge of each island, where the step edge causes a high local hydrogen concentration, then creates further dangling bonds which allow the islands to grow. A simulation has been constructed, which confirms this two stage mechanism.

Radio-frequency-driven electron-spin-echo-envelope-modulation spectroscopy

1991 ◽  
Vol 180 (3) ◽  
pp. 198-206 ◽  
Author(s):  
Herman Cho ◽  
Susanne Pfenninger ◽  
Jörg Forrer ◽  
Arthur Schweiger
Keyword(s):  
Radio Frequency ◽  
Electron Spin ◽  
Spin Echo ◽  
Electron Spin Echo ◽  
Modulation Spectroscopy ◽  
Envelope Modulation

Mn2+−Nitrogen Interactions in RNA Probed by Electron Spin−Echo Envelope Modulation Spectroscopy:  Application to the Hammerhead Ribozyme

1999 ◽  
Vol 121 (39) ◽  
pp. 9215-9218 ◽  
Author(s):  
Susan R. Morrissey ◽  
Thomas E. Horton ◽  
Christopher V. Grant ◽  
Charles G. Hoogstraten ◽  
R. David Britt ◽  
...  
Keyword(s):  
Electron Spin ◽  
Hammerhead Ribozyme ◽  
Spin Echo ◽  
Electron Spin Echo ◽  
Modulation Spectroscopy ◽  
Envelope Modulation
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