Longitudinal-optical phonon and shake-up excitations in the recombination spectra of semiconductor quantum wells

1993 ◽  
Vol 47 (11) ◽  
pp. 6823-6826 ◽  
Author(s):  
M. S. Skolnick ◽  
D. J. Mowbray ◽  
D. M. Whittaker ◽  
R. S. Smith
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Quantum Wells

Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells

1992 ◽  
Author(s):  
Michael A. Stroscio ◽  
Ki Wook Kim ◽  
Amit R. Bhatt ◽  
Gerald J. Iafrate ◽  
Mitra B. Dutta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Quantum Wells ◽  
Optical Phonon Scattering

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Relaxation Times ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Optical Phonon Scattering ◽  
Electron Phonon Scattering

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

DEPENDENCE OF EXCITON FORMATION ON ITS CENTER-OF-MASS MOMENTUM IN QUANTUM WELLS

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Acoustic Phonon ◽  
Center Of Mass ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Carrier Temperature ◽  
Comprehensive Study

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.

Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells

2005 ◽  
Vol 2 (11) ◽  
pp. 3887-3890 ◽  
Author(s):  
R. Intartaglia ◽  
T. Taliercio ◽  
P. Valvin ◽  
G. Almuneau ◽  
P. Lefebvre ◽  
...  
Keyword(s):  
Nitrogen Atom ◽  
Quantum Wells ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon
Sign in / Sign up

Export Citation Format

Share Document