Well-width and aluminum-concentration dependence of the exciton binding energies in GaAs/AlxGa1−xAs quantum wells

1993 ◽  
Vol 47 (23) ◽  
pp. 15755-15762 ◽  
Author(s):  
Massimo Gurioli ◽  
Juan Martinez-Pastor ◽  
Marcello Colocci ◽  
Antonio Bosacchi ◽  
Secondo Franchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Concentration Dependence ◽  
Binding Energies ◽  
Aluminum Concentration

scholarly journals Anisotropic 2D excitons unveiled in organic–inorganic quantum wells

2021 ◽  
Author(s):  
Lorenzo Maserati ◽  
Sivan Refaely-Abramson ◽  
Christoph Kastl ◽  
Christopher T. Chen ◽  
Nicholas J. Borys ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Crystalline Polymer ◽  
Binding Energies ◽  
Two Dimensional ◽  
Metal Chalcogenide

Hybrid layered metal chalcogenide crystalline polymer hosts strongly anisotropic two-dimensional excitons with large binding energies.

Exciton binding energies in CdTe/Cd1−xMnxTe multiple quantum wells

1992 ◽  
Vol 12 (4) ◽  
pp. 447-451 ◽  
Author(s):  
S.R. Jackson ◽  
J.E. Nicholls ◽  
W.E. Hagston ◽  
T.J. Gregory ◽  
P. Harrison ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Binding Energies ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA
Keyword(s):  
Variational Method ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Field Effect ◽  
Binding Energies ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Material Parameters ◽  
Asymmetric Double Quantum Wells

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.

Sign in / Sign up

Export Citation Format

Share Document