Nonadiabatic effect in a quantum charge pump

1993 ◽  
Vol 47 (19) ◽  
pp. 13031-13034 ◽  
Author(s):  
Chiu Liu ◽  
Qian Niu
Keyword(s):  
Charge Pump ◽  
Nonadiabatic Effect ◽  
Quantum Charge

PRECISION OF A QUANTUM CHARGE PUMP NEAR THE ADIABATIC REGIME

1994 ◽  
Vol 08 (28) ◽  
pp. 3987-4006
Author(s):  
CHIU LIU ◽  
QIAN NIU
Keyword(s):  
Exact Solution ◽  
Coulomb Blockade ◽  
Charge Pump ◽  
Time Dependent ◽  
Impurity Model ◽  
Anderson Impurity Model ◽  
Strong Coulomb ◽  
Adiabatic Regime ◽  
Energy Quantum ◽  
Quantum Charge

The precision of a quantum charge pump is studied through an exact solution of a time-dependent Schrödinger equation, and the noninteracting Anderson impurity model. An approximate solution to the interacting Anderson model in the strong Coulomb blockade limit is also presented. Near the adiabatic regime, the precision is rigorously found to depend exponentially on the operating frequency of the charge pump. The semiclassical rate equation is rederived when the temperature is higher than the energy quantum of the pumping frequency. Nonadiabatic heating to the leads is also discussed.

A Three-Phase Triple Voltage Rectifier Circuit Using Diode Charge Pump Scheme

2011 ◽  
Vol 131 (5) ◽  
pp. 762-763 ◽  
Author(s):  
Masaaki Sakui ◽  
Tsubasa Shimizu ◽  
Kenji Amei ◽  
Takahisa Ohji
Keyword(s):  
Charge Pump ◽  
Rectifier Circuit ◽  
Three Phase

High-Performance Regulated Charge Pump with an Extended Range of Load Current

2016 ◽  
Vol E99.C (1) ◽  
pp. 143-146
Author(s):  
Roger Yubtzuan CHEN ◽  
Zong-Yi YANG ◽  
Hongchin LIN
Keyword(s):  
High Performance ◽  
Charge Pump ◽  
Load Current ◽  
Extended Range

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

Clock swing enhanced charge pump

2011 ◽  
Author(s):  
Jianping Ding ◽  
Yuan Wang ◽  
Song Jia ◽  
Gang Du ◽  
Xing Zhang
Keyword(s):  
Charge Pump

Charge Pump for Gassy Application Venezuela Faja Del Orinoco

2014 ◽  
Author(s):  
Manuel Aredondo ◽  
Octavio Moreno ◽  
Javier Delgado ◽  
Tim W. Soltys ◽  
Jason J. Svitich ◽  
...  
Keyword(s):  
Charge Pump
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