Exciton wave functions and optical properties in a grating of quantum-well wires

1992 ◽  
Vol 46 (4) ◽  
pp. 2363-2374 ◽  
Author(s):  
A. D’Andrea ◽  
R. Del Sole
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Wave Functions ◽  
Quantum Well Wires

Toward quantum well wires: Fabrication and optical properties

1982 ◽  
Vol 41 (7) ◽  
pp. 635-638 ◽  
Author(s):  
P. M. Petroff ◽  
A. C. Gossard ◽  
R. A. Logan ◽  
W. Wiegmann
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Wires

Prediction of giantχ(3)values from a calculation of excitonic nonlinear optical properties in rectangular GaAs quantum-well wires

1994 ◽  
Vol 49 (19) ◽  
pp. 13528-13541 ◽  
Author(s):  
Frank L. Madarasz ◽  
Frank Szmulowicz ◽  
F. Kenneth Hopkins ◽  
Donald L. Dorsey
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Quantum Well Wires

Optical Properties and Carrier Transport in a Biased GaAs/AlAs Asymmetric Quintuple-Quantum-Well Superlattice

2018 ◽  
Vol 777 ◽  
pp. 121-125
Author(s):  
Kousuke Yoshida ◽  
Shoji Goto ◽  
Rui Wang ◽  
Makoto Hosoda ◽  
Kouichi Akahane ◽  
...  
Keyword(s):  
Optical Properties ◽  
Numerical Calculation ◽  
Electron Transport ◽  
Quantum Well ◽  
Carrier Transport ◽  
Heavy Hole ◽  
Wave Functions ◽  
Pin Diode ◽  
The Third ◽  
X State

Photoluminescence (PL) properties and carrier transport in a GaAs/AlAs asymmetric quintuple-quantum well superlattice (AQQW-SL) were investigated. Since AQQWs are separated by very thin AlAs barriers, various carrier transport phenomena are expected due to the strong coupling of wave functions between the Γ states in the GaAs QWs and the X states in the AlAs barriers. A 20-period AQQW was embedded in the i-layer of a pin diode. A PL signal between the ground Γ and the heavy hole (hh) states was observed around 740 nm. However, another PL branch was observed at about 665 nm around 6 V. Based on the numerical calculation of the Γ and X wave functions, the electron transport from the X state in the thick AlAs barrier (X11) to the Γ state in the third QW (Γ31) occurs at 6.1 V. Thus, a PL signal at 665 nm can be attributed to the recombination between Γ31 and hh11.

Sign in / Sign up

Export Citation Format

Share Document