Electron-hole pair creation and metal/semiconductor interface scattering observed by ballistic-electron-emission microscopy

1992 ◽  
Vol 45 (11) ◽  
pp. 6325-6328 ◽  
Author(s):  
E. Y. Lee ◽  
L. J. Schowalter
Keyword(s):  
Electron Emission ◽  
Pair Creation ◽  
Hole Pair ◽  
Ballistic Electron Emission Microscopy ◽  
Electron Hole ◽  
Semiconductor Interface ◽  
Ballistic Electron ◽  
Interface Scattering ◽  
Electron Hole Pair ◽  
Emission Microscopy

Imaging of Metal/Semiconductor Interface by Ballistic-Electron-Emission Microscopy (Beem)

1992 ◽  
Vol 295 ◽  
Author(s):  
E. Y. Lee ◽  
B. R. Turnew ◽  
J. R. Jimenez ◽  
L. J. Schowalter
Keyword(s):  
Free Path ◽  
Spatial Resolution ◽  
Electron Emission ◽  
Path Length ◽  
Free Path Length ◽  
Mean Free Path ◽  
Ballistic Electron Emission Microscopy ◽  
Semiconductor Interface ◽  
Ballistic Electron ◽  
Emission Microscopy

AbstractStudies in ballistic-electron-emission spectroscopy (BEES) have enabled precise energy measurements of Schottky barrier heights with excellent spatial resolution and, more recently, it was shown that even scattering at the metal/semiconductor interface affects the BEES spectrum [1]. Monte Carlo simulations have been done to predict the spatial resolution of ballistic-electron-emission microscopy (BEEM) [2]. In this paper, we will discuss the experimental spatial resolution of BEEM, and we will also give some of our BEES results for Au/Si and for Au/PtSi/Si. Our experimental BEEM studies indicate that, for Au/Si, hot electron transport is diffusive rather than ballistic, because the inelastic mean free path length (∼100 nm) is much larger than the elastic mean free path length (∼10 nm). This is in agreement with existing theories and with the literature on the internal photoemission method of studying the transport. Even in this diffusive regime, the spatial resolution of BEEM is still expected to be very good, being on the order of 10 nm [2]. Our preliminary work on PtSi shows that it has an attenuation length of 4 nm, which differs significantly from that of Au.

scholarly journals Theory of ballistic electron emission microscopy

2001 ◽  
Vol 66 (1-2) ◽  
pp. 3-51 ◽  
Author(s):  
P.L. de Andres ◽  
F.J. Garcia-Vidal ◽  
K. Reuter ◽  
F. Flores
Keyword(s):  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Emission Microscopy

scholarly journals Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

2015 ◽  
Vol 114 (24) ◽  
Author(s):  
Nicholas R. Monahan ◽  
Kristopher W. Williams ◽  
Bharat Kumar ◽  
Colin Nuckolls ◽  
X.-Y. Zhu
Keyword(s):  
Direct Observation ◽  
Organic Semiconductor ◽  
Hole Pair ◽  
Electron Hole ◽  
Semiconductor Interface ◽  
Pair Separation ◽  
Electron Hole Pair

scholarly journals Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

2019 ◽  
Vol 66 (1) ◽  
pp. 444-451 ◽  
Author(s):  
Jingtian Fang ◽  
Mahmud Reaz ◽  
Stephanie L. Weeden-Wright ◽  
Ronald D. Schrimpf ◽  
Robert A. Reed ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Full Band ◽  
Electron Hole Pair ◽  
Average Electron ◽  
Silicon And Germanium

Observation of misfit dislocations at the InxGa1−xAs/GaAs interface by ballistic‐electron‐emission microscopy

1996 ◽  
Vol 69 (7) ◽  
pp. 940-942 ◽  
Author(s):  
E. Y. Lee ◽  
S. Bhargava ◽  
M. A. Chin ◽  
V. Narayanamurti ◽  
K. J. Pond ◽  
...  
Keyword(s):  
Electron Emission ◽  
Misfit Dislocations ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Emission Microscopy
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