Shubnikov–de Haas effect in a metallic impurity band

1992 ◽  
Vol 45 (3) ◽  
pp. 1155-1158 ◽  
Author(s):  
S. Liu ◽  
H. D. Drew ◽  
A. Illiades ◽  
S. Hadjipanteli
Keyword(s):  
Impurity Band ◽  
Metallic Impurity ◽  
Haas Effect

Observation of a metallic impurity band inn-type GaAs

1990 ◽  
Vol 42 (5) ◽  
pp. 3179-3182 ◽  
Author(s):  
D. Romero ◽  
S. Liu ◽  
H. D. Drew ◽  
K. Ploog
Keyword(s):  
Impurity Band ◽  
Metallic Impurity

Thermal activation of carriers from a metallic impurity band

1993 ◽  
Vol 48 (15) ◽  
pp. 11394-11397 ◽  
Author(s):  
S. Liu ◽  
K. Karrai ◽  
F. Dunmore ◽  
H. D. Drew ◽  
R. Wilson ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Impurity Band ◽  
Metallic Impurity

Metallic impurity band in the narrow-band-gap semiconductorn-type InSb

1991 ◽  
Vol 43 (5) ◽  
pp. 4046-4050 ◽  
Author(s):  
J. B. Choi ◽  
S. Liu ◽  
H. D. Drew
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Impurity Band ◽  
Metallic Impurity

IMPURITY BAND CONDUCTION STUDY BY PIEZORESISTANCE MEASUREMENTS

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-333-C4-336
Author(s):  
M. AVEROUS ◽  
J. CALAS ◽  
C. FAU
Keyword(s):  
Impurity Band ◽  
Band Conduction

On the history of the Einstein–de Haas effect

1979 ◽  
Vol 128 (7) ◽  
pp. 545 ◽  
Author(s):  
Viktor Ya. Frenkel'
Keyword(s):  
History Of ◽  
Haas Effect

scholarly journals Impurity band conduction in Si-doped β-Ga2O3 films

2021 ◽  
Vol 118 (7) ◽  
pp. 072105
Author(s):  
Anil Kumar Rajapitamahuni ◽  
Laxman Raju Thoutam ◽  
Praneeth Ranga ◽  
Sriram Krishnamoorthy ◽  
Bharat Jalan
Keyword(s):  
Impurity Band ◽  
Si Doped ◽  
Band Conduction

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

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