scholarly journals Quantum size effects and grain-boundary scattering in polycrystalline cobalt disilicide films

1991 ◽  
Vol 44 (23) ◽  
pp. 13140-13143 ◽  
Author(s):  
R. G. P. van der Kraan ◽  
J. F. Jongste ◽  
H. M. Jaeger ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Grain Boundary ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Boundary Scattering ◽  
Cobalt Disilicide ◽  
Quantum Size ◽  
Grain Boundary Scattering

Size effects in thin gold films: Discrimination between electron-surface and electron-grain boundary scattering by measuring the Hall effect at 4 K

2013 ◽  
Vol 102 (5) ◽  
pp. 051608 ◽  
Author(s):  
Ricardo Henriquez ◽  
Luis Moraga ◽  
German Kremer ◽  
Marcos Flores ◽  
Andres Espinosa ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Hall Effect ◽  
Size Effects ◽  
Gold Films ◽  
Boundary Scattering ◽  
Grain Boundary Scattering

scholarly journals Size Effects in Metallic Films

1978 ◽  
Vol 5 (2) ◽  
pp. 99-105 ◽  
Author(s):  
F. Warkusz
Keyword(s):  
Grain Boundary ◽  
Film Thickness ◽  
Size Effects ◽  
Approximate Expression ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Metallic Films ◽  
Grain Boundary Scattering ◽  
Grain Diameter

Based on the theories so far developed, an approximate expression for the resistivity of metallic films is derived, which takes into account film thickness, grain diameter, as well as the coefficients of surface scattering and grain boundary scattering. The derived formulae are compared with the results achieved by other authors.

Search for quantum size effects in ultrathin epitaxial metallic films

1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Metallic Films ◽  
Quantum Size

QUANTUM-SIZE EFFECTS ON THE OPTICAL PROPERTIES OF SMALL PARTICLES

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores
Keyword(s):  
Optical Properties ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Small Particles ◽  
Quantum Size

Quantum size effects in semiconducting and semimetallic films

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Quantum size effects for the extraordinary Hall effect in thin magnetic films

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev
Keyword(s):  
Hall Effect ◽  
Size Effects ◽  
Magnetic Films ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Magnetic Films ◽  
Extraordinary Hall Effect

Thermoelectric power in very thin film thermocouples: Quantum size effects

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Thin Film ◽  
Thermoelectric Power ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Film Thermocouples

Quantum size effects in nanocrystalline semiconducting titania layers prepared by anodic oxidative hydrolysis of titanium trichloride

1993 ◽  
Vol 97 (37) ◽  
pp. 9493-9498 ◽  
Author(s):  
Ladislav Kavan ◽  
Tiziana Stoto ◽  
Michael Graetzel ◽  
Donald Fitzmaurice ◽  
Valery Shklover
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Titanium Trichloride ◽  
Hydrolysis Of

Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

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