Optically detected electron-nuclear double resonance ofS=1 states of defects in semiconductors:PGa-YPin GaP

1991 ◽  
Vol 43 (11) ◽  
pp. 9108-9117 ◽  
Author(s):  
F. C. Rong ◽  
H. J. Sun ◽  
G. D. Watkins
Keyword(s):  
Double Resonance ◽  
Electron Nuclear Double Resonance ◽  
Optically Detected

Optically detected electron nuclear double resonance on the residual donor in GaN

1997 ◽  
Vol 43 (1-3) ◽  
pp. 181-184
Author(s):  
F.K. Koschnick ◽  
K. Michael ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
P. Gibart
Keyword(s):  
Double Resonance ◽  
Electron Nuclear Double Resonance ◽  
Optically Detected

Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
F. K. Koschnick ◽  
K. Michael ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Hyperfine Interaction ◽  
Quadrupole Splitting ◽  
Luminescence Band ◽  
Optical Detection ◽  
Double Resonance ◽  
Yellow Luminescence ◽  
Electron Nuclear Double Resonance ◽  
Anisotropic Part ◽  
Optically Detected

Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in n-type undoped GaN. The ODENDOR lines are due to gallium and show a quadrupole splitting which can be described with an axial tensor. The quadrupole parameter was estimated to be q(69Ga) = 1/2 Qzz = 0.22 MHz. A hyperfine interaction for 69Ga of about 0.3 MHz for the isotropic and of about 0.15 MHz for the anisotropic part was estimated from the width of the ODENDOR lines. It is tentatively suggested that a Ga interstitial is the residual donor.

Detection of hydrogen in nominally pure GaP:Zn by optically detected electron nuclear double resonance

1986 ◽  
Vol 59 (10) ◽  
pp. 653-656 ◽  
Author(s):  
J. Shinar ◽  
A. Kana-ah ◽  
B.C. Cavenett ◽  
T.A. Kennedy ◽  
N. Wilsey
Keyword(s):  
Double Resonance ◽  
Electron Nuclear Double Resonance ◽  
Optically Detected

Location Of Residual Donors In GaN Epitaxial Layers

1997 ◽  
Vol 482 ◽  
Author(s):  
E. R. Glaser ◽  
T. A. Kennedy ◽  
A. E. Wickenden ◽  
D. D. Koleske ◽  
W. G. Perry ◽  
...  
Keyword(s):  
Double Resonance ◽  
High Resistivity ◽  
Biaxial Compression ◽  
Electron Nuclear Double Resonance ◽  
X Ray ◽  
Thermal Expansion Coefficients ◽  
Strain Relationship ◽  
The Difference ◽  
Optically Detected ◽  
Relationship Of

AbstractOptically-detected electron-nuclear double resonance (ODENDOR) studies at 24 GHz on high-resistivity GaN films grown on Al2O3 have been combined with x-ray diffraction measurements to obtain information on the location of the residual shallow donors. Strong ODENDOR assigned to 69,71Ga lattice nuclei was detected on the g=1.951 effective-mass donor resonance found on the 2.2 eV emission bands. The x-ray studies reveal that the layers are under biaxial compression with high values of strain (∼ 2–3 × 10−3). The quadrupole splittings for 69Ga are smaller than those reported for strain-free samples by 15–25 %. The dominant sources of the local electric field gradient (EFG) responsible for the splittings are attributed to the wurtzite crystal structure and the strain fields that arise from the lattice constant mismatch and the difference in thermal expansion coefficients. An EFG/strain relationship of 3 × 1022 Vm−2 per unit strain at the 69,71Ga nuclei is deduced. The ODENDOR can be described with asymmetry parameter η=0. This provides evidence that the donors are in the crystallites rather than near grain boundaries.

Electron Spin Resonance Investigations on Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
B.K. Meyer ◽  
D.M. Hofmann ◽  
P. Christmann ◽  
W. Stadler ◽  
A. Nikolov ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Defect Density ◽  
Double Resonance ◽  
Hydrogen Desorption ◽  
Dangling Bonds ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Luminescence Efficiency ◽  
Increased Sensitivity ◽  
Optically Detected

ABSTRACTThe defect properties of as-etched, annealed and thermally oxidized nano-porous Si as well as self supporting macro-porous silicon layers are studied by electron paramagnetic resonance (EPR), photoluminescence (PL), optically detected magnetic resonance (ODMR), and electron nuclear double resonance (ENDOR). The paramagnetic defects observed are dangling bonds closely related to the Pb-center, the Si/SiO2 interfacial defect. In EPR a minimum defect density of 1016 cm−3 is observed for as-etched material, it reaches a maximum of 8 x 1018 cm−3 for samples annealed around 400°C. We quantitatively correlate the defect density with hydrogen desorption data and luminescence efficiency. In the ODMR experiments the same dangling bond centers are observed on the 1.7 eV luminescence band, but with increased sensitivity in the infra-red emission band at 1.15 eV. Electron nuclear double resonance experiments show that the dangling bonds are not solely bonded to Si neighbors but involve hydrogen and fluorine.

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