Electrical conductivity of amorphous silicon doped with rare-earth elements

1991 ◽  
Vol 43 (11) ◽  
pp. 8946-8950 ◽  
Author(s):  
J. H. Castilho ◽  
I. Chambouleyron ◽  
F. C. Marques ◽  
C. Rettori ◽  
F. Alvarez
1989 ◽  
Vol 39 (4) ◽  
pp. 2860-2863 ◽  
Author(s):  
J. H. Castilho ◽  
F. C. Marques ◽  
G. E. Barberis ◽  
C. Rettori ◽  
F. Alvarez ◽  
...  

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.


1989 ◽  
Vol 112 (2) ◽  
pp. 561-568
Author(s):  
V. V. Petrov ◽  
V. S. Prosolovich

2011 ◽  
Vol 239-242 ◽  
pp. 1253-1259
Author(s):  
Zheng Hua Guo ◽  
Ge Wang Shuai ◽  
Ping Fang

The variations of hardness and electrical conductivity of a deformed supersaturated Cu-Cr alloy have been investigated during isothermal aging. The influence of trace rare earth elements (La, Y or Nd) as a second alloying element was also studied. The results showed that the heavily deformed alloys exhibited an instant increase in both hardness and electrical conductivity due to an accelerated precipitation after a short aging treatment. Compared with the solution treated Cu-0.8wt %Cr-0.05wt. %La and Cu-0.8wt %Cr-0.05wt. %Y alloy, the as-cast Cu-0.8 wt. %Cr-0.05 wt. %Nd exhibited a retarded recrystallization which should be attributed to the pinning effect of primary Cr precipitates lying in the grain boundaries. Rare earth elements can act as a useful second alloying element to inhibit recrystallization of the deformed alloys due to the occurrence of some copper-rare earth intermetallic compounds and rare earth oxides.


2021 ◽  
Vol 11 (3) ◽  
pp. 1025
Author(s):  
Konstantin Andryushin ◽  
Vladimir Sakhnenko ◽  
Anatoliy Turik ◽  
Lidiya Shilkina ◽  
Alexey Pavelko ◽  
...  

The reasons for the high electrical conductivity of bismuth ferrite due to its natural composite structure, structural non-stoichiometry, redox processes, and the boundary position in the perovskite family have been considered. It has been shown that it is possible to significantly (2–3 orders of magnitude) reduce the conductivity of BiFeO3 by introducing large-sized ions of rare-earth elements (REE: La, Pr, Nd, Sm, Eu, Gd with 0.94 ≤ R¯ ≤ 1.04 Å) in amounts of up to 10 mol %. An interpretation of the observed effects has been given. A consideration about the appropriateness of taking into account the presented results when developing devices using materials of the BiFeO3/REE type has been expressed.


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