Microscopic theory of second-order Raman scattering in silicon under uniaxial stress

1991 ◽  
Vol 43 (8) ◽  
pp. 6633-6641 ◽  
Author(s):  
C. H. Grein ◽  
S. Zollner ◽  
M. Cardona
1989 ◽  
Vol 39 (12) ◽  
pp. 8308-8312 ◽  
Author(s):  
A. Alexandrou ◽  
Y. Pusep ◽  
M. Cardona

2006 ◽  
Vol 20 (30n31) ◽  
pp. 5047-5056
Author(s):  
V. APAJA ◽  
E. KROTSCHECK ◽  
A. RIMNAC ◽  
R. E. ZILLICH

In this work, we study transport currents in excited states. This requires the calculation of particle currents [Formula: see text] to second order in the excitation amplitudes. For that purpose, we take a well-tested microscopic theory of inhomogeneous quantum liquids and extend it to find the mass currents created when atoms scatter off a surface or when excitations evaporate atoms. This is the first theoretical study of transport phenomena in a quantum liquid based on a quantitative microscopic theory.


1991 ◽  
Vol 41 (3) ◽  
pp. 1259-1262 ◽  
Author(s):  
F Coter ◽  
E Ehrenfreund ◽  
B Horovitz

1975 ◽  
Vol 8 (18) ◽  
pp. L384-L387 ◽  
Author(s):  
T R Carver ◽  
E R Pike ◽  
J M Vaughan

1979 ◽  
Vol 11 (1-3) ◽  
pp. 408-411 ◽  
Author(s):  
R.P. Silberstein ◽  
S.A. Safran ◽  
M.S. Dresselhaus

2017 ◽  
Vol 53 (4) ◽  
pp. 1-4 ◽  
Author(s):  
Tonglei Cheng ◽  
Xiaojie Xue ◽  
Weiqing Gao ◽  
Takenobu Suzuki ◽  
Yasutake Ohishi

Sign in / Sign up

Export Citation Format

Share Document