High-frequency vortex dynamics and dissipation of high-temperature superconductors

1991 ◽  
Vol 43 (1) ◽  
pp. 523-531 ◽  
Author(s):  
N.-C. Yeh
Keyword(s):  
High Temperature ◽  
Vortex Dynamics ◽  
High Frequency ◽  
High Temperature Superconductors

High-Frequency Vortex Critical Dynamics of Superconducting Amorphous Mo3Si Films

1997 ◽  
Vol 11 (18) ◽  
pp. 2141-2155 ◽  
Author(s):  
N.-C. Yeh ◽  
U. Kriplani ◽  
W. Jiang ◽  
J. Kumar ◽  
H. F. Fong ◽  
...  
Keyword(s):  
High Temperature ◽  
Vortex Dynamics ◽  
High Frequency ◽  
High Temperature Superconductors ◽  
Three Dimensional ◽  
Critical Dynamics ◽  
Glass Transitions ◽  
Static Disorder ◽  
Type Ii Superconductors ◽  
Si Films

The effects of static disorder on the vortex dynamics of type-II superconductors are investigated by comparing the high-frequency vortex response of superconducting amorphous Mo3Si (a- Mo3Si ) films with that of the high-temperature superconductors. We find that for a- Mo3Si films in the three-dimensional limit, the microwave vortex response near the second-order vortex-solid to vortex-liquid glass transitions is consistent with vortex critical relaxation, in contrast to the diffusion vortex dynamics in high-temperature superconductors at the same frequencies. The observation of microwave vortex critical dynamics in a- Mo3Si is attributed to the extremely disordered nature of the amorphous superconductors, which results in a much shorter-range vortex correlation and therefore a faster critical relaxation.

Vortex Dynamics and Dissipation in High Temperature Superconductors — from DC to Microwave Frequencies

1992 ◽  
Vol 275 ◽  
Author(s):  
N.-C. Yeh ◽  
W. Jiang ◽  
D. S. Reed ◽  
U. Kriplani ◽  
F. Holtzberg ◽  
...  
Keyword(s):  
High Temperature ◽  
Vortex Dynamics ◽  
Electrical Transport ◽  
High Frequency ◽  
High Temperature Superconductors ◽  
Epitaxial Films ◽  
Melting Transition ◽  
Frequency Limit ◽  
Current Frequency ◽  
Microwave Frequencies

ABSTRACTA second-order vortex-solid melting transition in twinned Y-Ba-Cu-O single crystals is manifested by two independent types of electrical transport measurements: the electric field (E) versus current density (J) isotherms, and the ac resistivity (ρ) vs current frequency (ω) isotherms. Universal static and dynamic exponents (ν ≈ 2/3 and Ζ ≈ 3, respectively) are found for magnetic fields ranging from 1 to 90 kOe, frequencies ranging from 0 to 2 MHz, magnetic directions parallel and perpendicular to the crystal c-axis, as well as samples with and without proton irradiations. At microwave frequencies, we find that the vortex dissipation in Nd-Ce-Cu-O epitaxial films is consistent with the viscous motion of individual vortices, due to the break down of the critical scaling theory in the high frequency limit.

Intrinsic and disorder-induced anisotropic vortex dynamics of high-temperature superconductors

1997 ◽  
Vol 282-287 ◽  
pp. 1943-1944
Author(s):  
N.-C. Yeh ◽  
W. Jiang ◽  
C.C. Fu ◽  
M. Konczykowski ◽  
F. Holtzberg
Keyword(s):  
High Temperature ◽  
Vortex Dynamics ◽  
High Temperature Superconductors

Microwave device applications and high-frequency electrodynamics of high-temperature superconductors

1996 ◽  
Author(s):  
Dong H. Wu ◽  
Mark Santer ◽  
James C. Booth ◽  
Julia Phillips ◽  
Steven M. Anlage
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
High Temperature Superconductors ◽  
Microwave Device ◽  
Device Applications

Three Terminal HTc Vortex Flow Transistors: Optimisation of the Device Geometry Employing Bicrystal Grain-Boundary Josephson Junctions

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1253-1258
Author(s):  
V. Granata ◽  
B. A. Davidson ◽  
E. Sarnelli ◽  
S. Pagano
Keyword(s):  
High Temperature ◽  
Grain Boundary ◽  
Vortex Dynamics ◽  
High Frequency ◽  
Josephson Junctions ◽  
Vortex Flow ◽  
Operating Regime ◽  
Bias Current ◽  
Advantages And Disadvantages ◽  
Geometric Configurations

We have numerically studied the static and dynamic behavior of a three terminal vortex-flow transistor based on a parallel array of Josephson junctions. We explicitly show advantages and disadvantages for different device geometric configurations, systematically changing the symmetry of the bias-current distribution. Using parameters typical of high-temperature superconducting junctions at 77K, we have analysed for each configuration the dependence of the critical current on the control current, and the voltage-current curves. We have calculated gain and transresistance for different bias conditions, and explained the numerical results in terms of the vortex dynamics in the array. This study allows us to establish limits for the operating regime of these devices when used as high-frequency amplifiers.

Sign in / Sign up

Export Citation Format

Share Document