Electronic structure of superlattices incorporating diluted magnetic semiconductors

1991 ◽  
Vol 43 (3) ◽  
pp. 2305-2314 ◽  
Author(s):  
P. M. Young ◽  
H. Ehrenreich ◽  
P. M. Hui ◽  
K. C. Hass
Keyword(s):  
Electronic Structure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic

Electronic structure of the diluted magnetic semiconductors Pb1−xSnxTe:Yb

2004 ◽  
Vol 825 ◽  
Author(s):  
Evgenii Skipetrov ◽  
Elena Zvereva ◽  
Olga Volkova ◽  
Alexander Golubev ◽  
Vasiliy Slyn'ko
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Valence Band ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Hole Concentration ◽  
Energy Position ◽  
Carrier Energy ◽  
Order Of Magnitude ◽  
Diluted Magnetic

AbstractThe galvanomagnetic effects in the new diluted magnetic semiconductors Pb1−xSnxTe:Yb were studied to determine the parameters of the electronic structure and to elucidate its influence on the magnetic properties. It was found that the temperature dependencies of the resistivity ρ and the Hall coefficient RH have a “metallic” character, however the RH changes in anomalous manner: its value increases more than by order of magnitude and then passes through maximum with increasing the temperature. Upon an increase of the ytterbium concentration the hole concentration decreases by more than order of magnitude. The results were explained assuming a formation of deep ytterbium-induced defect level in the valence band of the alloys, which moves up to its top with increasing the ytterbium concentration and pins the Fermi level within the valence band. The energy position of the Fermi level was calculated in the frame of two-band dispersion law and used to determine the position of Yb level in the alloys. The diagram of the charge carrier energy spectrum under varying the alloy composition was built.

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

2006 ◽  
Vol 243 (7) ◽  
pp. 1696-1700 ◽  
Author(s):  
J. I. Hwang ◽  
Y. Ishida ◽  
M. Kobayashi ◽  
Y. Osafune ◽  
T. Mizokawa ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
X Ray ◽  
Absorption Studies ◽  
Diluted Magnetic ◽  
X Ray Absorption

Electronic structure of C co-doped (Ga, Fe)N-based diluted magnetic semiconductors

2010 ◽  
Vol 74 (4) ◽  
pp. 463-466 ◽  
Author(s):  
O. Mounkachi ◽  
A. Benyoussef ◽  
A. El Kenz ◽  
E. H. Saidi ◽  
E. K. Hlil
Keyword(s):  
Electronic Structure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic ◽  
Co Doped
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