Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

1991 ◽  
Vol 43 (18) ◽  
pp. 14643-14668 ◽  
Author(s):  
J. Nakata
2015 ◽  
Vol 82 (1) ◽  
pp. 93-104 ◽  
Author(s):  
Tomonari Hirano ◽  
Yusuke Kazama ◽  
Kotaro Ishii ◽  
Sumie Ohbu ◽  
Yuki Shirakawa ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Kento Nagata ◽  
Chika Hashimoto ◽  
Tomomi Watanabe-Asaka ◽  
Kazusa Itoh ◽  
Takako Yasuda ◽  
...  

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