Dependence of the electronic structure on local atomic order in ternaryCu2NiZn alloys

1991 ◽  
Vol 43 (18) ◽  
pp. 14409-14413 ◽  
Author(s):  
J. Kudrnovský ◽  
S. K. Bose ◽  
O. Jepsen
Keyword(s):  
Electronic Structure ◽  
Atomic Order

scholarly journals Local atomic order, electronic structure and electron transport properties of Cu-Zr metallic glasses

2014 ◽  
Vol 115 (20) ◽  
pp. 203714 ◽  
Author(s):  
J. Antonowicz ◽  
A. Pietnoczka ◽  
K. Pękała ◽  
J. Latuch ◽  
G. A. Evangelakis
Keyword(s):  
Electronic Structure ◽  
Electron Transport ◽  
Transport Properties ◽  
Metallic Glasses ◽  
Atomic Order ◽  
Electron Transport Properties

Effects of the atomic order on the half-metallic electronic structure in the Co2Fe(Ga0.5Ge0.5) Heusler alloy thin film

2020 ◽  
Vol 4 (11) ◽  
Author(s):  
K. Goto ◽  
L. S. R. Kumara ◽  
Y. Sakuraba ◽  
Y. Miura ◽  
I. Kurniawan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Heusler Alloy ◽  
Alloy Thin Film ◽  
Atomic Order ◽  
Half Metallic

Changes in electronic structure of Ni3Mo caused by modification of atomic order

1996 ◽  
Vol 217 (1-2) ◽  
pp. 78-86 ◽  
Author(s):  
K Ławniczak-Jabłońska ◽  
L.-C Duda ◽  
J Guo ◽  
S.M Butorin ◽  
J Nordgren
Keyword(s):  
Electronic Structure ◽  
Atomic Order

Atomic order, electronic structure and thermodynamic stability of nickel aluminate

2019 ◽  
Vol 21 (47) ◽  
pp. 25952-25961
Author(s):  
Ishfaque Elias ◽  
Aloysius Soon ◽  
Jun Huang ◽  
Brian S. Haynes ◽  
Alejandro Montoya
Keyword(s):  
Electronic Structure ◽  
Thermodynamic Stability ◽  
Atomic Order ◽  
Nickel Aluminate

Nickel aluminate, NiAl2O4, adopts the inverse tetragonal P4122 structure and remains largely inverse below 1000 K.

Self-organization of atomic order and electronic structure in LaSrMnO films

2004 ◽  
Vol 49 (5) ◽  
pp. 572-576 ◽  
Author(s):  
Z. A. Samoilenko ◽  
V. D. Okunev ◽  
T. A. D’yachenko ◽  
E. I. Pushenko ◽  
S. J. Lewandowski ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Self Organization ◽  
Atomic Order

Phase Stability and Site Substitution in NB-AL Compounds

1994 ◽  
Vol 364 ◽  
Author(s):  
M. Sluiter ◽  
M. Takahashi ◽  
Y. Kawazoe
Keyword(s):  
Electronic Structure ◽  
Phase Stability ◽  
Local Density ◽  
Electronic Structure Calculations ◽  
Site Preference ◽  
Density Approximation ◽  
Atomic Order ◽  
Σ Phase ◽  
Site Preferences ◽  
Structure Calculations

AbstractThe site preferences of Ta, Mo, and W in A15 Nb3Al, the phase stability of off-stoichiometric A15 Nb3Al, and the atomic order of the Nb2Al D8b (σ) phase are investigated by performing electronic structure calculations based on the local density approximation. Mo, W, and Ta are found to have a preference for the Nb sublattice. Ta has the strongest site preference. It was shown that some recently proposed ground states for off-stoichiometric A15 phases are unlikely to occur in the Nb-Al system. Moreover, it was shown that the atomic order in the D8b Nb2Al phase contributes significantly to its stability.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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