Weak localization, electron-electron interactions, and Joule heating in the presence of a microwave electric field in thin metal films

1991 ◽  
Vol 43 (2) ◽  
pp. 1385-1390 ◽  
Author(s):  
J. Liu ◽  
N. Giordano
Keyword(s):  
Electric Field ◽  
Joule Heating ◽  
Weak Localization ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Electron Interactions

Difficulties of weak localization theory for thin metal films with magnetic impurities

1998 ◽  
Vol 57 (5) ◽  
pp. 2683-2686 ◽  
Author(s):  
Guohong Li ◽  
Mingling Chen ◽  
Guoliang Liu ◽  
Min Wang ◽  
Shiguang Wang ◽  
...  
Keyword(s):  
Weak Localization ◽  
Metal Films ◽  
Thin Metal ◽  
Magnetic Impurities ◽  
Thin Metal Films ◽  
Localization Theory

Surface morphology evolution during electric field assisted dissolution of thin metal films

2019 ◽  
Vol 685 ◽  
pp. 402-407
Author(s):  
Boris Okorn ◽  
Ivana Fabijanić ◽  
Jordi Sancho-Parramon ◽  
Franc Zupanič ◽  
Tonica Bončina ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electric Field ◽  
Metal Films ◽  
Thin Metal ◽  
Morphology Evolution ◽  
Thin Metal Films ◽  
Surface Morphology Evolution

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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