Truncation-rod scattering: Analysis by the dynamical theory of x-ray diffraction

1991 ◽  
Vol 43 (17) ◽  
pp. 13827-13832 ◽  
Author(s):  
R. Colella
Keyword(s):  
Dynamical Theory ◽  
X Ray Diffraction ◽  
X Ray

Investigation of the phase shift in X-ray forward diffraction using an X-ray interferometer

1998 ◽  
Vol 5 (3) ◽  
pp. 967-968 ◽  
Author(s):  
Keiichi Hirano ◽  
Atsushi Momose
Keyword(s):  
Phase Shift ◽  
Silicon Crystal ◽  
Dynamical Theory ◽  
Perfect Crystal ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bragg Geometry

The phase shift of forward-diffracted X-rays by a perfect crystal is discussed on the basis of the dynamical theory of X-ray diffraction. By means of a triple Laue-case X-ray interferometer, the phase shift of forward-diffracted X-rays by a silicon crystal in the Bragg geometry was investigated.

Multiple reflection optimization package for X-ray diffraction

CrystEngComm ◽  
2021 ◽  
Author(s):  
S. Magalhães ◽  
J. S. Cabaço ◽  
J. P. Araújo ◽  
E. Alves
Keyword(s):  
Dynamical Theory ◽  
Multiple Reflection ◽  
X Ray Diffraction ◽  
X Ray

New software for the simulation and fitting of 2θ–ω scans of symmetric and asymmetric reflections based on the dynamical theory of X-ray diffraction is presented.

An algorithm for calculating diffraction profiles of 2θ scans for multiple diffraction from crystals and thin films

2014 ◽  
Vol 70 (6) ◽  
pp. 572-582
Author(s):  
Hsin-Yi Chen ◽  
Mau-Sen Chiu ◽  
Chia-Hung Chu ◽  
Shih-Lin Chang
Keyword(s):  
Initial Phase ◽  
Atomic Layer ◽  
Dynamical Theory ◽  
Far Field ◽  
X Rays ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
X Ray ◽  
Beam Surface ◽  
Surface Diffraction

An algorithm is developed based on the dynamical theory of X-ray diffraction for calculating the profiles of the diffracted beam,i.e.the diagrams of the intensity distributionversus2θ when a crystal is fixed at an angle of its maximum diffracted intensity. Similar to Fraunhofer (far-field) diffraction for a single-slit case, in the proposed algorithm the diffracted beam from one atomic layer excited by X-rays is described by the composition of (N+ 1) coherent point oscillators in the crystal. The amplitude and the initial phase of the electric field for each oscillator can be calculated based on the dynamical theory with given boundary conditions. This algorithm not only gives diffraction profiles but also provides the contribution of the excitation of modes when extremely asymmetric diffraction is involved in the diffraction process. Examples such as extremely asymmetric two-beam surface diffraction and three-beam surface diffraction are presented and discussed in detail.

scholarly journals Experimentally obtained and computer-simulated X-ray non-coplanar 18-beam pinhole topographs for a silicon crystal

2019 ◽  
Vol 75 (3) ◽  
pp. 483-488 ◽  
Author(s):  
Kouhei Okitsu ◽  
Yasuhiko Imai ◽  
Yoshitaka Yoda
Keyword(s):  
Silicon Crystal ◽  
Dynamical Theory ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Good Agreement

Non-coplanar 18-beam X-ray pinhole topographs for a silicon crystal were computer simulated by fast Fourier transforming the X-ray rocking amplitudes that were obtained by solving the n-beam (n = 18) Ewald–Laue dynamical theory (E-L&FFT method). They were in good agreement with the experimentally obtained images captured using synchrotron X-rays. From this result and further consideration based on it, it has been clarified that the X-ray diffraction intensities when n X-ray waves are simultaneously strong in the crystal can be computed for any n by using the E-L&FFT method.

Dynamical Theory for Simultaneous X-Ray Diffraction

1966 ◽  
Vol 10 ◽  
pp. 67-79
Author(s):  
P. Penning
Keyword(s):  
Experimental Data ◽  
Plane Wave ◽  
Quantitative Data ◽  
Reasonable Agreement ◽  
Dynamical Theory ◽  
Inversion Symmetry ◽  
Surprising Result ◽  
X Ray Diffraction ◽  
Wave Fields ◽  
X Ray

AbstractComplete dynamical solutions for three coupled plane-wave components in crystal structures with inversion symmetry have been found. After reviewing briefly the dynamical solutions for wave fields with two coupled plane-wave components, the results for the three-beam case are discussed in qualitative terms. Attention is paid to singular points and lines on the ω-surface, and to the attenuation of the mode-intensity because of absorption. The most surprising result is that in the case one of the reflections is forbidden (Umweganregung) the absorption is reduced in comparison with the adjoining two-beam cases. Experimental data are in reasonable agreement with the theory. Quantitative data are presented for a few three-beam cases of simultaneous diffraction of Cu Kα. radiation in germanium.

Investigation of surface acoustic wave fields in silicon crystals by x-ray diffraction: A dynamical theory approach

2005 ◽  
Vol 97 (11) ◽  
pp. 113505 ◽  
Author(s):  
R. Tucoulou ◽  
O. Mathon ◽  
C. Ferrero ◽  
V. Mocella ◽  
D. V. Roshchupkin ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Dynamical Theory ◽  
Theory Approach ◽  
X Ray Diffraction ◽  
Wave Fields ◽  
X Ray ◽  
Silicon Crystals

Dynamical X-Ray Diffraction Simulations for Asymmetric Reflections for III-V Semiconductors Multilayers

1987 ◽  
Vol 31 ◽  
pp. 167-173
Author(s):  
A. T. Macrander ◽  
D. W. Berreman ◽  
S. E. G. Slushy
Keyword(s):  
Matrix Representation ◽  
Dynamical Theory ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Single Crystal Structures ◽  
Double Heterostructures ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Theoretical Sensitivity

A new matrix representation of the dynamical theory of x–ray diffraction which treats asymmetric reflections of coherent (i.e., pseudomorphic) epitaxial single crystal structures has been applied to III–V semiconductor multilayer structures. The laminar approximation is made, and Maxwell‘s equations are integrated in a 8 x 8 matrix form for the sublayers. Diffraction profiles from any multilayer can be obtained by multiplying the sublayer matrices. The method was used to simulate on a computer the intrinsic reflecting power of hypothetical structures in order to probe theoretical sensitivity limits for thin layers. We investigated [100] oriented structures consisting of single In ( l–x )Ga (x)As(l–y)P(y) quaternary (Q) layers on InP substrates as well as double heterostructures (DH‘s) consisting of a thin Q layer sandwiched between an InP substrate and an InP cladding layer.

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