Real-time small-angle x-ray scattering study of the early stage of phase separation in theSiO2-BaO-K2O system

1991 ◽  
Vol 43 (16) ◽  
pp. 13417-13437 ◽  
Author(s):  
G. Brian Stephenson ◽  
William K. Warburton ◽  
Wolfgang Haller ◽  
Arthur Bienenstock
Keyword(s):  
Phase Separation ◽  
Real Time ◽  
Small Angle ◽  
Early Stage ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

Small‐Angle X‐Ray Scattering Study of Phase Separation in Glasses

1972 ◽  
Vol 43 (4) ◽  
pp. 1636-1641 ◽  
Author(s):  
I. S. Patel ◽  
Paul W. Schmidt ◽  
Stanley M. Ohlberg
Keyword(s):  
Phase Separation ◽  
Small Angle ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

scholarly journals Small-angle x-ray-scattering study of phase separation and crystallization in the bulk amorphousMg62Cu25Y10Li3alloy

1999 ◽  
Vol 59 (18) ◽  
pp. 11755-11759 ◽  
Author(s):  
W. Liu ◽  
W. L. Johnson ◽  
S. Schneider ◽  
U. Geyer ◽  
P. Thiyagarajan
Keyword(s):  
Phase Separation ◽  
Small Angle ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

Time-resolved small-angle x-ray scattering study of the early stage of amyloid formation of an apomyoglobin mutant

2011 ◽  
Vol 84 (6) ◽  
Author(s):  
Maria Grazia Ortore ◽  
Francesco Spinozzi ◽  
Silvia Vilasi ◽  
Ivana Sirangelo ◽  
Gaetano Irace ◽  
...  
Keyword(s):  
Small Angle ◽  
Early Stage ◽  
Amyloid Formation ◽  
Time Resolved ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

A Real-time X-ray Scattering Study of Sputtering Growth of TiN Films

1994 ◽  
Vol 375 ◽  
Author(s):  
J. H. Jel ◽  
D. Y. Noh ◽  
H. K. Kim ◽  
K. S. Liang
Keyword(s):  
Real Time ◽  
Crystallographic Orientation ◽  
Early Stage ◽  
Morphological Changes ◽  
Preferred Orientation ◽  
Tin Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

AbstractWe report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either (111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from (002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

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