Quantum Hall effect in quasi-one-dimensional conductors

1991 ◽  
Vol 43 (13) ◽  
pp. 11353-11366 ◽  
Author(s):  
Victor M. Yakovenko
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
One Dimensional

THE QUANTUM HALL EFFECT IN QUASI-ONE-DIMENSIONAL ORGANIC CONDUCTORS

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3089-3089
Author(s):  
V. M. YAKOVENKO
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Organic Conductors ◽  
Temperature Evolution ◽  
Edge States ◽  
One Dimensional ◽  
Recent Developments ◽  
Theoretical Overview

Theoretical overview of the quantum Hall effect in quasi-one-dimensional (Q1D) organic conductors (TMTSF) 2 X will be presented.1 The emphasis will be on the recent developments, such as the temperature evolution of the Hall effect2,3 and the chiral edge states.4 Time permitting, a theory of the nonchiral electron edge states in a Q1D triplet superconductor5 and the holon edge states in the charge-gap regime6 will be presented too.

Possible quantum Hall effect in a magnetic-field-induced phase transition in the quasi-one-dimensional CDW organic conductor, HMTSF–TCNQ

2015 ◽  
Vol 460 ◽  
pp. 241-244 ◽  
Author(s):  
Keizo Murata ◽  
Yuhei Fukumoto ◽  
Keiichi Yokogawa ◽  
Woun Kang ◽  
Ryo Takaoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Phase Transition ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Organic Conductor ◽  
One Dimensional

scholarly journals Upstream modes and antidots poison graphene quantum Hall effect

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
N. Moreau ◽  
B. Brun ◽  
S. Somanchi ◽  
K. Watanabe ◽  
T. Taniguchi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Charge Carriers ◽  
Remarkable Property ◽  
One Dimensional ◽  
Quantum Hall Regime ◽  
Hall Regime ◽  
Scanning Gate

AbstractThe quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals.

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