Tensile-stress dependence of magnetostriction in multilayers of amorphous ribbons

1990 ◽  
Vol 42 (10) ◽  
pp. 6471-6475 ◽  
Author(s):  
A. Hernando ◽  
C. Gomez-Polo ◽  
E. Pulido ◽  
G. Rivero ◽  
M. Vazquez ◽  
...  
Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 2908 ◽  
Author(s):  
Michał Nowicki

The results of the investigation on tensile stress dependence of the SAMR (small angle magnetization rotation) signal in soft magnetic amorphous ribbons are presented. Exemplary results for commercially available, negatively magnetostrictive 2705M, 2714A, and 6030D amorphous ribbons show significant stress dependence, in contrast to positively magnetostrictive 2826MB alloy. The magnetoelastic hysteresis of the obtained characteristics is compared, as well as the influence of the biasing H field and supply current variations. Based on the results, 2705M alloy with near-zero negative magnetostriction is proposed as best suited for a SAMR-based, magnetoelastic force sensor.


Materials ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 2814 ◽  
Author(s):  
Michał Nowicki

The results of an investigation on tensile stress dependence of mean Seebeck coefficient in Fe-based amorphous ribbons are presented, constituting a new Seebeck-sigma effect. A measurement test stand, capable of the determination of small variations in thermopower in such materials under stress is described. Exemplary results for commercially available, positively magnetostrictive SA1 and 2605CO amorphous ribbons show significant stress dependence with more than 1% of relative change, in contrast to negatively magnetostrictive 6030D alloys with 0.1% change. Non-ferromagnetic alloys are tested for comparison purposes, giving negligible results. Thus, the possibility of a magnetomechanical mechanism of the stress influence is proposed.


Author(s):  
P. GARCIA-TELLO ◽  
J. M. BLANCO ◽  
N. MURILLO ◽  
G.R. ARANDA ◽  
J. GONZALEZ ◽  
...  

2015 ◽  
Vol 28 (7) ◽  
pp. 2059-2062 ◽  
Author(s):  
Mehrdad Moradi ◽  
Ali Dadsetan ◽  
Seyed Majid Mohseni ◽  
Ali Jazayeri Gharehbagh

2007 ◽  
Vol 994 ◽  
Author(s):  
Chihak Ahn ◽  
Scott T Dunham

AbstractWe studied stress effects on As activation in silicon using density functional theory. Based on lattice expansion coefficient, we calculated formation energy change due to applied stress and plotted the stress dependence of AsmV concentration. We found that biaxial stress results in minimal impact on As activation, which is consistent with experimental observation by Sugii et al. [J. Appl. Phys. 96, 261 (2004)], who found no significant change in As activation under tensile stress.


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