scholarly journals Resonant-photoemission study ofSnO2: Cationic origin of the defect band-gap states

1990 ◽  
Vol 42 (18) ◽  
pp. 11914-11925 ◽  
Author(s):  
J. M. Themlin ◽  
R. Sporken ◽  
J. Darville ◽  
R. Caudano ◽  
J. M. Gilles ◽  
...  
Keyword(s):  
Band Gap ◽  
Defect Band ◽  
Resonant Photoemission ◽  
Photoemission Study ◽  
Gap States

Resonant photoemission study on the boron 1sexciton of the wide-band-gap semiconductorc-BN

1995 ◽  
Vol 52 (16) ◽  
pp. 11853-11858 ◽  
Author(s):  
S. Shin ◽  
A. Agui ◽  
M. Fujisawa ◽  
Y. Tezuka ◽  
T. Ishii ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Resonant Photoemission ◽  
Photoemission Study

scholarly journals Nature of band-gap states in V-dopedTiO2revealed by resonant photoemission

1997 ◽  
Vol 55 (24) ◽  
pp. 16083-16087 ◽  
Author(s):  
D. Morris ◽  
R. Dixon ◽  
F. H. Jones ◽  
Y. Dou ◽  
R. G. Egdell ◽  
...  
Keyword(s):  
Band Gap ◽  
Resonant Photoemission ◽  
Gap States

High-resolution resonant photoemission study of CeRu2

2000 ◽  
Vol 281-282 ◽  
pp. 729-730 ◽  
Author(s):  
K Matsuda ◽  
A Sekiyama ◽  
S Suga ◽  
S Imada ◽  
Y Saitoh ◽  
...  
Keyword(s):  
High Resolution ◽  
Resonant Photoemission ◽  
Photoemission Study

High resolution Ce 3 d –4 f resonant photoemission study of CeNiSn and CePdSn

1999 ◽  
Vol 111 (7) ◽  
pp. 373-378 ◽  
Author(s):  
A Sekiyama ◽  
S Suga ◽  
Y Saitoh ◽  
S Ueda ◽  
H Harada ◽  
...  
Keyword(s):  
High Resolution ◽  
Resonant Photoemission ◽  
Photoemission Study

Effect of Double Defects on Transmission Spectra of One-Dimensional Photonic Crystals

2010 ◽  
Vol 663-665 ◽  
pp. 725-728 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai ◽  
Yun Gao Cai
Keyword(s):  
Photonic Crystals ◽  
Band Gap ◽  
Theoretical Calculations ◽  
Stop Band ◽  
Band Gaps ◽  
Characteristic Matrix ◽  
Frequency Range ◽  
Defect Band ◽  
One Dimensional ◽  
The One

Considered the model of the one-dimensional photonic crystals (1-D PCs) with double defects, the refractive indexes (n2’, n3’ and n2’’, n3’’) of the double defects were 2.0, 4.0 and 4.0, 2.0 respectively. With parameter n2=1.5, n3=2.5, by theoretical calculations with characteristic matrix method, the results shown that for a certain number (14 was taken) of layers of the 1-D PCs, when the double defects abutted, there was a defect band gap in the stop band gap, while when the double defects separated, there occurred two defect band gaps in the stop band gap; besides, with the separation of the two defects, the transmittance of the double defect band gaps decreased gradually. In addition, in this progress, the frequency range of the stop band gap has a little increase from 0.092 to 0.095.

Angle-resolved and resonant photoemission study of the ZrO-like film on ZrC(100)

2007 ◽  
Vol 601 (21) ◽  
pp. 5077-5082 ◽  
Author(s):  
K. Edamoto ◽  
T. Nagayama ◽  
K. Ozawa ◽  
S. Otani
Keyword(s):  
Resonant Photoemission ◽  
Photoemission Study

The origin and nature of silicon band‐gap states at the Si/SiO2interface

1981 ◽  
Vol 38 (11) ◽  
pp. 884-886 ◽  
Author(s):  
J. Singh ◽  
A. Madhukar
Keyword(s):  
Band Gap ◽  
Gap States
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