Size dependence of electron-phonon coupling in semiconductor nanospheres: The case of CdSe

1990 ◽  
Vol 42 (17) ◽  
pp. 11123-11132 ◽  
Author(s):  
M. C. Klein ◽  
F. Hache ◽  
D. Ricard ◽  
C. Flytzanis
2017 ◽  
Vol 19 (26) ◽  
pp. 17349-17355 ◽  
Author(s):  
Bing Ai ◽  
Chao Liu ◽  
Zhao Deng ◽  
Jing Wang ◽  
Jianjun Han ◽  
...  

Size dependence of exciton activation energy, electron–phonon coupling strength, and thermal expansion of the bandgap of CsPbBr3 QDs were studied.


2007 ◽  
Vol 91 (26) ◽  
pp. 262101 ◽  
Author(s):  
S. C. Ray ◽  
Y. Low ◽  
H. M. Tsai ◽  
C. W. Pao ◽  
J. W. Chiou ◽  
...  

2014 ◽  
Vol 22 (1) ◽  
Author(s):  
Y. Fan ◽  
J. Li ◽  
H. Chen ◽  
X. Lu ◽  
X. Liu

AbstractIn this paper the size-dependence of energy relaxation, which is induced by the electron-phonon (e-ph) interactions and the electron-surface (e-s) interactions in noble metal nanoparticles, is investigated. Then based on the analysis and the derivation of the e-s coupling constant in metal nanospheres, the formula of the effective electron-phonon coupling constant Geff of hollow gold nanospheres (HGNs) is deduced. Moreover, the correctness of the formulae gets proved by contrast analyses of the calculated Geff values and experimental values obtained from literature.


2012 ◽  
Vol 407 (17) ◽  
pp. 3510-3514 ◽  
Author(s):  
Donghua Fan ◽  
Rong Zhang ◽  
Yufu Zhu ◽  
Huiren Peng

2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.


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