Selection rules in resonance electron scattering from adsorbed molecules

1990 ◽  
Vol 41 (7) ◽  
pp. 4793-4796 ◽  
Author(s):  
P. J. Rous ◽  
R. E. Palmer ◽  
E. T. Jensen
Keyword(s):  
Electron Scattering ◽  
Selection Rules ◽  
Adsorbed Molecules ◽  
Resonance Electron

Resonance electron scattering by adsorbed molecules: resonance energy versus bond length

1993 ◽  
Vol 287-288 ◽  
pp. A375
Author(s):  
L. Sǐller ◽  
K.M. Hock ◽  
R.E. Palmer ◽  
J.F. Wendelken
Keyword(s):  
Bond Length ◽  
Electron Scattering ◽  
Resonance Energy ◽  
Adsorbed Molecules ◽  
Resonance Electron

Resonance electron scattering by adsorbed molecules: resonance energy versus bond length

1993 ◽  
Vol 287-288 ◽  
pp. 165-168 ◽  
Author(s):  
L. Šiller ◽  
K.M. Hock ◽  
R.E. Palmer ◽  
J.F. Wendelken
Keyword(s):  
Bond Length ◽  
Electron Scattering ◽  
Resonance Energy ◽  
Adsorbed Molecules ◽  
Resonance Electron

Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings

2014 ◽  
Vol 22 (4) ◽  
Author(s):  
L. Karachevtseva ◽  
Yu. Goltviansky ◽  
O. Kolesnyk ◽  
O. Lytvynenko ◽  
O. Stronska
Keyword(s):  
Electron Scattering ◽  
Stark Effect ◽  
Oscillation Amplitude ◽  
Level Energy ◽  
Ir Absorption ◽  
Macroporous Silicon ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Silicon Structures ◽  
Resonance Electron

AbstractWe investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.

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