Electronic structure of GaAs/AlAs symmetric superlattices: A high-pressure study near the type-I–type-II crossover

1990 ◽  
Vol 41 (6) ◽  
pp. 3641-3646 ◽  
Author(s):  
M. Holtz ◽  
R. Cingolani ◽  
K. Reimann ◽  
R. Muralidharan ◽  
K. Syassen ◽  
...  
Keyword(s):  
High Pressure ◽  
Electronic Structure ◽  
Type I ◽  
Type Ii ◽  
High Pressure Study

Synergism of hyperoxia and high helium pressures in the causation of convulsions

1982 ◽  
Vol 53 (1) ◽  
pp. 192-202 ◽  
Author(s):  
R. W. Brauer ◽  
R. W. Beaver
Keyword(s):  
High Pressure ◽  
High Pressures ◽  
Type I ◽  
Type Ii ◽  
Measurable Effect ◽  
Seizure Onset ◽  
Sharp Drop ◽  
A Value ◽  
Hyperoxic Exposure ◽  
Zone Ii

Hyperoxia beyond 1.8 ATA results in a striking reduction of high-pressure neurological syndrome (HPNS) type I convulsion threshold pressures but is without measurable effect on type II convulsions. The synergism is partially or completely reversed by increasing alveolar or tissue CO2 levels. High total pressures (PI) result in striking reductions in the duration of hyperoxic exposure preceding seizure onset (tc). The interaction of hyperoxia and high pressure gives rise to three zones on the PO2-Pt plane. In zone I, Pt less than 30 ATA, the duration of hyperoxia prior to convulsion onset is given by the equation PO2 -- PO2 lim = K/(tc -- tc lim), where PO2 lim and tc lim both decrease with increasing total pressure. Zone II, Pt = 30–50 ATA and PO2 1.8–2.3 ATA, is characterized by a sharp drop in tc, as Pt is increased beyond 30 ATA, to a value near 15 min that is constant within the PO2 limits given. In zone III, Pt greater than 50 ATA and PO2 greater than 0.2 ATA, tc is of the order of 2 min, and the seizures are essentially HPNS seizures only slightly modified by hyperoxia. The data are interpreted as suggesting that zone I represents hyperoxic seizures facilitated by high pressures, whereas zone II represents HPNS type I seizures facilitated by hyperoxia.

scholarly journals The Electronic Structure of CdSe/CdS Core/Shell Seeded Nanorods: Type-I or Quasi-Type-II?

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 5880-5885 ◽  
Author(s):  
Hagai Eshet ◽  
Michael Grünwald ◽  
Eran Rabani
Keyword(s):  
Electronic Structure ◽  
Core Shell ◽  
Type I ◽  
Type Ii

High pressure study of β-UH3 crystallographic and electronic structure

2004 ◽  
Vol 370 (1-2) ◽  
pp. 59-64 ◽  
Author(s):  
I Halevy ◽  
S Salhov ◽  
S Zalkind ◽  
M Brill ◽  
I Yaar
Keyword(s):  
High Pressure ◽  
Electronic Structure ◽  
High Pressure Study

High Pressure Study of HfNi Crystallographic and Electronic Structure

HFI/NQI 2004 ◽  
2008 ◽  
pp. 786-791
Author(s):  
I. Halevy ◽  
S. Salhov ◽  
A. F. Yue ◽  
J. Hu ◽  
I. Yaar
Keyword(s):  
High Pressure ◽  
Electronic Structure ◽  
High Pressure Study

scholarly journals High pressure study and electronic structure of the super-alloy HfIr3

2010 ◽  
Vol 215 ◽  
pp. 012012 ◽  
Author(s):  
I Halevy ◽  
S Salhov ◽  
M L Winterrose ◽  
A Broide ◽  
A F Yue ◽  
...  
Keyword(s):  
High Pressure ◽  
Electronic Structure ◽  
High Pressure Study ◽  
Super Alloy

Understanding the Electronic Structure of Graphene Quantum Dot-Fullerene Nanohybrids for Photovoltaic Applications

2016 ◽  
Vol 230 (5-7) ◽  
Author(s):  
Chandrima Chakravarty ◽  
Poulami Ghosh ◽  
Bikash Mandal ◽  
Pranab Sarkar
Keyword(s):  
Electronic Structure ◽  
Quantum Dot ◽  
Hybrid Systems ◽  
Density Functional ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Graphene Quantum Dot ◽  
Band Energy ◽  
Form Type

AbstractBy using density-functional tight-binding method we have calculated the electronic structure of graphene quantum dot (GQD)-fullerene hybrid systems and explored the efficacy of their use in designing solar cells. We have shown that the electronic energy levels of the nanohybrids can be tuned either by varying the size of the quantum dots or by proper functionalization of the quantum dot (QD). The GQD-fullerene nanohybrids form type-I or type-II band energy alignment depending upon the size of the GQD. Thus, hybrid systems with smaller sized QDs form type-II band energy alignment while those of larger GQDs form type-I alignment. The type-II band alignment confirms the spatial charge separation for the systems and thus the rate of recombination of charge carriers will be low. The value of

Type I-Type II transition in ultra short period GaAs/AlAs SUPERLATTICES revealed by luminescence under high-excitation intensity and high pressure

1990 ◽  
Vol 228 (1-3) ◽  
pp. 217-219 ◽  
Author(s):  
R. Cingolani ◽  
M. Holtz ◽  
R. Muralidharan ◽  
K. Ploog ◽  
K. Reimann ◽  
...  
Keyword(s):  
High Pressure ◽  
Excitation Intensity ◽  
Type I ◽  
Type Ii ◽  
High Excitation ◽  
Short Period

High Pressure Study of HfNi Crystallographic and Electronic Structure

2005 ◽  
Vol 159 (1-4) ◽  
pp. 357-362
Author(s):  
I. Halevy ◽  
S. Salhov ◽  
A. F. Yue ◽  
J. Hu ◽  
I. Yaar
Keyword(s):  
High Pressure ◽  
Electronic Structure ◽  
High Pressure Study
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