Disorder-induced line broadening in first-order Raman scattering from graphite

1990 ◽  
Vol 41 (17) ◽  
pp. 12260-12263 ◽  
Author(s):  
K. Nakamura ◽  
M. Fujitsuka ◽  
M. Kitajima
Keyword(s):  
Raman Scattering ◽  
Line Broadening ◽  
First Order

Raman Scattering Investigation of Superconductivity in Si46 Clathrates

1996 ◽  
Vol 452 ◽  
Author(s):  
S. L. Fang ◽  
L. Grigorian ◽  
A. M. Rao ◽  
P. C. Eklund ◽  
G. Dresselhaus ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Room Temperature ◽  
Line Broadening ◽  
Phonon Interaction ◽  
Metallic Behavior ◽  
Type Ii Superconductors ◽  
First Order ◽  
Electron Phonon Interaction ◽  
Scattering Spectra ◽  
Raman Scattering Spectra

AbstractRoom temperature Raman scattering spectra are reported for the type II superconductors MxBaySi46 (M-Na, K) which were recently shown to exhibit Tc's ∼ 3.5 K. The spectra are compared to those of other Si46-clathrates which exhibit normal metallic behavior down to 2K. Thirteen of the twenty first-order Raman frequencies predicted by group theory have been detected, and the frequencies are found to be sensitive to the particular dopants. The Raman linewidths observed for the MxBaySi46 system are comparable to those observed for Na8Si46 and K7Si46. The data, taken collectively, suggest that the line broadening in the metallic Si-clathrates is due to important contributions from both the electron-phonon interaction as well as to a random filling of the Si cages.

First-order Raman scattering in homoepitaxial chemical vapor deposited diamond at elevated temperatures

1992 ◽  
Vol 212 (1-2) ◽  
pp. 206-215 ◽  
Author(s):  
H. Herchen ◽  
M.A. Cappelli ◽  
M.I. Landstrass ◽  
M.A. Plano ◽  
M.D. Moyer
Keyword(s):  
Raman Scattering ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
First Order ◽  
Chemical Vapor Deposited

The Second-Order Raman Stokes Stronger Than the First-Order Raman Stokes Due to Inverse Raman Scattering in a Single Mode Tellurite Fiber

2017 ◽  
Vol 53 (4) ◽  
pp. 1-4 ◽  
Author(s):  
Tonglei Cheng ◽  
Xiaojie Xue ◽  
Weiqing Gao ◽  
Takenobu Suzuki ◽  
Yasutake Ohishi
Keyword(s):  
Raman Scattering ◽  
Single Mode ◽  
Second Order ◽  
First Order

The first-order Raman scattering of Cd1−xPbxF2 mixed crystals

1982 ◽  
Vol 44 (3) ◽  
pp. 417-419 ◽  
Author(s):  
P. Ciepielewski ◽  
I. Kosacki
Keyword(s):  
Raman Scattering ◽  
Mixed Crystals ◽  
First Order

First‐order Raman scattering in MgO microcrystals

1985 ◽  
Vol 57 (3) ◽  
pp. 973-975 ◽  
Author(s):  
K. Ishikawa ◽  
N. Fujima ◽  
H. Komura
Keyword(s):  
Raman Scattering ◽  
First Order

Vibrational behavior of theMn+1AXnphases from first-order Raman scattering(M=Ti,V,Cr,A=Si,X=C,N)

2005 ◽  
Vol 71 (1) ◽  
Author(s):  
Jonathan E. Spanier ◽  
Surojit Gupta ◽  
Maher Amer ◽  
Michel W. Barsoum
Keyword(s):  
Raman Scattering ◽  
First Order ◽  
Vibrational Behavior

FIRST ORDER RAMAN SCATTERING FROM SEMICONDUCTOR QUANTUM DOTS

1989 ◽  
Vol 03 (08) ◽  
pp. 1167-1181 ◽  
Author(s):  
P.A.M. RODRIGUES ◽  
HILDA A. CERDEIRA ◽  
F. CERDEIRA
Keyword(s):  
Crystal Structure ◽  
Quantum Dots ◽  
Raman Spectrum ◽  
Raman Scattering ◽  
Bulk Material ◽  
Semiconductor Quantum Dots ◽  
Polycrystalline Materials ◽  
Nanometer Size ◽  
First Order ◽  
Linear Dimensions

We develop a model appropriate for describing the Raman spectrum of samples, containing a collection of semiconductor quantum dots with and without dispersion in their linear dimensions. These nanometer size crystallites are assumed to have the same atomic arrangement as that of the bulk material and to be embedded in a host material made up of a different semiconductor of the same crystal structure. The results from our calculations are compared to previous models for polycrystalline materials.

Absolute cross section of first-order Raman scattering in GaAs

1979 ◽  
Vol 20 (4) ◽  
pp. 1758-1761 ◽  
Author(s):  
M. H. Grimsditch ◽  
D. Olego ◽  
M. Cardona
Keyword(s):  
Raman Scattering ◽  
Cross Section ◽  
Absolute Cross Section ◽  
First Order
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