Electron-phonon coupling in superconductingBa0.6K0.4BiO3: A Raman scattering study

1989 ◽  
Vol 40 (4) ◽  
pp. 2662-2665 ◽  
Author(s):  
K. F. McCarty ◽  
H. B. Radousky ◽  
D. G. Hinks ◽  
Y. Zheng ◽  
A. W. Mitchell ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Scattering Study

scholarly journals Raman scattering study of spin-density-wave order and electron-phonon coupling in Ba(Fe1−xCox)2As2

2011 ◽  
Vol 84 (10) ◽  
Author(s):  
L. Chauvière ◽  
Y. Gallais ◽  
M. Cazayous ◽  
M. A. Méasson ◽  
A. Sacuto ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Spin Density ◽  
Density Wave ◽  
Spin Density Wave ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Scattering Study

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

Raman scattering and tunable electron–phonon coupling in single layer graphene

2007 ◽  
Vol 143 (1-2) ◽  
pp. 39-43 ◽  
Author(s):  
Jun Yan ◽  
Yuanbo Zhang ◽  
Sarah Goler ◽  
Philip Kim ◽  
Aron Pinczuk
Keyword(s):  
Raman Scattering ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Phonon Coupling ◽  
Layer Graphene ◽  
Electron Phonon Coupling

Raman scattering from impurities in semiconductors. II. Special cases

1978 ◽  
Vol 56 (5) ◽  
pp. 560-564
Author(s):  
Robert Barrie ◽  
H. -C. Chow
Keyword(s):  
Raman Scattering ◽  
General Result ◽  
Phonon Scattering ◽  
Phonon Coupling ◽  
Strong Electron ◽  
Impurities In Semiconductors ◽  
Electron Phonon Coupling ◽  
Special Cases ◽  
Weak Electron

Special cases of the general result for Raman scattering from an impurity in a semiconductor are discussed. For weak electron–phonon coupling the zero-phonon and one-phonon scattering intensities are derived. For strong electron–phonon coupling a comparison is made between two different approximations that have been previously used.

Raman scattering and electron-phonon coupling inRbxC60

1992 ◽  
Vol 68 (6) ◽  
pp. 883-886 ◽  
Author(s):  
Michael G. Mitch ◽  
Sabrina J. Chase ◽  
Jeffrey S. Lannin
Keyword(s):  
Raman Scattering ◽  
Phonon Coupling ◽  
Electron Phonon Coupling
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