Two-photon absorption in quantum-well structures near half the direct band gap

1989 ◽  
Vol 40 (2) ◽  
pp. 1403-1406 ◽  
Author(s):  
Akira Shimizu
1991 ◽  
Vol 05 (17) ◽  
pp. 1133-1138
Author(s):  
KAZUHITO FUJII ◽  
AKIRA SHIMIZU ◽  
JOHAN BERGQUIST ◽  
SOTOMITSU IKEDA ◽  
TAKESHI SAWADA

We have measured two-photon-absorption spectra of GaAs/Al 0.4 Ga 0.6 As quantum-well structures in a static electric field for photon energies near half the band gap energy, and found drastic field-induced-changes in the spectra. The two-photon-absorption peak at half the energy of the lowest light-hole exciton is induced by the static electric field normal to the quantum well layers, in agreement with a theory that takes account of quasi-two-dimensional exciton effects. With increasing the electric field, however, this peak grows more drastically than the theoretical prediction, and it approaches a large value predicted by another simplified theory based on a two-level model.


2011 ◽  
Vol 83 (3) ◽  
Author(s):  
Kasturi Saha ◽  
Vivek Venkataraman ◽  
Pablo Londero ◽  
Alexander L. Gaeta

2009 ◽  
Vol 23 (23) ◽  
pp. 2783-2789 ◽  
Author(s):  
ARUN GAUR ◽  
D. K. SHARMA ◽  
K. S. SINGH ◽  
NAGESHWAR SINGH

Nanosecond laser pulses have employed the photoconductive Z-scan technique. Photoconductivity traces measured by moving the sample across the laser beam waist were used for measuring two and three-photon absorption processes. The value of the three-photon absorption coefficient β3=9.6×10-10 cm 3/ GW 2 in the case of direct, and 8.96×10-12 cm 3/ GW 2 and 5.0×10-12 cm 3/ GW 2 in the case of indirect band gap crystals have been estimated from a comparison of traces measured by exciting the sample with the first and second harmonics of Nd : YAG laser. The low value of β3 in the case of indirect band gap crystals compared to direct band gap crystals is attributed to phonon-assisted transitions.


Author(s):  
E. Dupont ◽  
P. B. Corkum ◽  
P. W. Dooley ◽  
H. C. Liu ◽  
P. H. Wilson ◽  
...  

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