Resonance Raman scattering induced by interface roughness in a short-period GaAs/Ga1−xAlxAs superlattice

1989 ◽  
Vol 39 (5) ◽  
pp. 3254-3257 ◽  
Author(s):  
I. Sela ◽  
R. Beserman ◽  
H. Morkoç
Keyword(s):  
Raman Scattering ◽  
Resonance Raman ◽  
Interface Roughness ◽  
Resonance Raman Scattering ◽  
Short Period

Profiling Composition Variations in Composition-Modulated GaP/InP Short-Period Superlattices Using Resonance Raman Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
H. M. Cheong ◽  
Yong Zhang ◽  
A. G. Norman ◽  
J. D. Perkins ◽  
A. Mascarenhas ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Band Gap ◽  
Resonance Raman ◽  
Band Gap Energy ◽  
Resonance Raman Scattering ◽  
Rich Region ◽  
Gap Energy ◽  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

AbstractWe use resonance Raman scattering (RRS) and electroreflection (ER) measurements to profile the the composition and strain variations in laterally composition-modulated (CM) GaP/InP short-period superlattices (SPS's). The ER spectra of a GaP2.2/InP2.0 SPS give the fundamental band-gap energy at 1.69±0.05eV, which is about 210 meV lower than the band gap energy of a GaInP random alloy with the same overall composition. The RRS measurements reveal strong dependences of the phonon spectrum on the polarization and the excitation energy. In RRS spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical (LO) phonon redshifts by 4.0±0.5 cm−1 near the resonance with the fundamental energy gap. On the other hand, when the polarizations are orthogonal to the composition modulation, the LO phonons redshift as much as 16 cm−1 at low excitation energies. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02. Our result also indicates that there are small volumes (less than 1% volume fraction) with very high In mole fraction.

Resonance Raman Scattering in Short Period GaAs-AlAs Superlattices

1989 ◽  
pp. 157-164
Author(s):  
J. Menéndez ◽  
A. Pinczuk ◽  
J. P. Valladares ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Resonance Raman ◽  
Resonance Raman Scattering ◽  
Short Period

Resonance Raman scattering studies of composition-modulated GaP/InP short-period superlattices

1999 ◽  
Vol 60 (7) ◽  
pp. 4883-4888 ◽  
Author(s):  
Hyeonsik M. Cheong ◽  
Yong Zhang ◽  
A. G. Norman ◽  
J. D. Perkins ◽  
A. Mascarenhas ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Resonance Raman ◽  
Resonance Raman Scattering ◽  
Short Period ◽  
Short Period Superlattices

Probing combinations of acoustic phonons in MoS2 by intervalley double-resonance Raman scattering

2021 ◽  
Vol 103 (4) ◽  
Author(s):  
Rafael N. Gontijo ◽  
Andreij Gadelha ◽  
Orlando J. Silveira ◽  
Ricardo W. Nunes ◽  
Marcos A. Pimenta ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Double Resonance ◽  
Resonance Raman ◽  
Resonance Raman Scattering ◽  
Acoustic Phonons

Remote detection of pollutants using resonance Raman scattering

1975 ◽  
Vol 14 (11) ◽  
pp. 2703 ◽  
Author(s):  
H. Rosen ◽  
P. Robrish ◽  
O. Chamberlain
Keyword(s):  
Raman Scattering ◽  
Resonance Raman ◽  
Remote Detection ◽  
Resonance Raman Scattering
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