Erratum: Calculation of the diamagnetic shift in resonant-tunneling double-barrierGaAs/AlxGa1−xAsheterostructures

1989 ◽  
Vol 39 (17) ◽  
pp. 12957-12957
Author(s):  
Luiz A. Cury ◽  
A. Celeste ◽  
J. C. Portal
1988 ◽  
Vol 38 (18) ◽  
pp. 13482-13485 ◽  
Author(s):  
Luiz A. Cury ◽  
A. Celeste ◽  
J. C. Portal

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

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