Ion-beam-induced metal-insulator transition inYBa2Cu3O7−δ: A mobility edge

1989 ◽  
Vol 39 (16) ◽  
pp. 11599-11602 ◽  
Author(s):  
J. M. Valles ◽  
A. E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. P. Garno ◽  
...  
Keyword(s):  
Ion Beam ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Mobility Edge ◽  
Metal Insulator

scholarly journals METAL–INSULATOR TRANSITION IN 3D QUANTUM PERCOLATION

2008 ◽  
Vol 22 (29) ◽  
pp. 5217-5227 ◽  
Author(s):  
IGOR TRAVĚNEC
Keyword(s):  
Geometric Mean ◽  
Finite Size ◽  
Universality Class ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Mobility Edge ◽  
Metal Insulator ◽  
The Difference ◽  
Transition Study ◽  
Energy Plane

We present the metal–insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties — Landauer conductance — for the binary distribution of energies. We calculate the mobility edge in disorder (ratio of insulating sites) — energy plane in detail and we find the extremal critical disorder somewhat closer to the classical percolation threshold than formerly reported. We calculate the critical exponent ν along the mobility edge and find it constant and equal to the one of 3D Anderson model, confirming common universality class. Possible exception is the center of the conduction band, where either the single-parameter scaling is not valid anymore, or finite size effects are immense. One of the reasons for such statement is the difference between results from arithmetic and geometric averaging of conductance at special energies. Only the geometric mean yields zero critical disorder in band center, which was theoretically predicted.

Ion-beam induced metal insulator transition in YBCO films

1993 ◽  
Vol 195 ◽  
pp. 527-530 ◽  
Author(s):  
J. Lesueur ◽  
L. Dumoulin ◽  
S. Quillet ◽  
J. Radcliffe
Keyword(s):  
Ion Beam ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Ybco Films

Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

2009 ◽  
Vol 79 (17) ◽  
Author(s):  
A. Fernández-Pacheco ◽  
J. M. De Teresa ◽  
R. Córdoba ◽  
M. R. Ibarra
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

PHOTOINDUCED CHARGE CARRIERS IN INSULATING CUPRATES: FERMI GLASS INSULATOR, METAL-INSULATOR TRANSITION AND SUPERCONDUCTIVITY

1993 ◽  
Vol 07 (22) ◽  
pp. 3751-3815 ◽  
Author(s):  
GANG YU ◽  
ALAN J. HEEGER
Keyword(s):  
Fermi Energy ◽  
Spectral Response ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Mobility Edge ◽  
Metal Insulator ◽  
Time Resolved ◽  
Electronic Phase ◽  
Glass Insulator ◽  
Metallic Droplets

The results of photoexcitation experiments in partially doped, insulating cuprates are reviewed, and the physical implications of these “photodoping” experiments are discussed. The existence of a Fermi-glass insulating state at intermediate doping levels is thoroughly explored. The localized electronic states near the Fermi energy (EF) are characterized through transport, steady-state photoconductivity (including spectral response) and time resolved transient photodoping experiments (sub-nanosecond through microsecond). The experimental results indicate an Anderson-type metal-insulator transition in the doped cuprates; i.e., the transition from metal to insulator is dominated by disorder-induced localization. The Fermi energy can be shifted across the mobility edge either by increasing the doping level or by transient photoexcitation at high pump intensities, thereby causing the metal-insulator transition. The high-Tc superconductors, therefore, can be characterized as disordered metals with the Fermi energy relatively close to the mobility edge (Ec). Although the photo-generated carriers are generated homogeneously, the data indicate electronic phase separation into metallic “droplets”. The temperature dependence of the photoinduced conductivity implies that these droplets become superconducting below the intrinsic transition temperature observed in the heavily doped metallic regime.

Fermi-surface reconstruction close to a pressure-induced metal-insulator transition

2004 ◽  
Vol 114 ◽  
pp. 277-281 ◽  
Author(s):  
J. Wosnitza ◽  
J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
J. A. Schlueter ◽  
...  
Keyword(s):  
Fermi Surface ◽  
Surface Reconstruction ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Fermi Surface Reconstruction
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