Magnetic-field-dependent self-consistent electronic structure of an inversion layer in the two-subband state

1989 ◽  
Vol 39 (14) ◽  
pp. 10232-10235 ◽  
Author(s):  
S. Trott ◽  
G. Paasch ◽  
G. Gobsch ◽  
M. Trott
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Inversion Layer ◽  
Self Consistent ◽  
Field Dependent

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

MAGNETIC FIELD DEPENDENT RESTSTRAHLEN SPECTRA IN PARAMAGNETIC CeF3

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-499-C6-501 ◽  
Author(s):  
H. Gerlinger ◽  
G. Schaack
Keyword(s):  
Magnetic Field ◽  
Field Dependent

MAGNETIC FIELD DEPENDENT RELAXATION TIME IN p-InSb AT LOW TEMPERATURES

1981 ◽  
Vol 42 (C5) ◽  
pp. C5-689-C5-693
Author(s):  
J. D.N. Cheeke ◽  
G. Madore ◽  
A. Hikata
Keyword(s):  
Magnetic Field ◽  
Relaxation Time ◽  
Low Temperatures ◽  
Field Dependent
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