Distribution of occupied near-surface band-gap states ina-Si:H

1988 ◽  
Vol 38 (11) ◽  
pp. 7680-7693 ◽  
Author(s):  
K. Winer ◽  
I. Hirabayashi ◽  
L. Ley
Keyword(s):  
Band Gap ◽  
Surface Band ◽  
Near Surface ◽  
Gap States

Effects of oxidation on surface band-gap states ina-Si:H

1988 ◽  
Vol 37 (14) ◽  
pp. 8363-8369 ◽  
Author(s):  
K. Winer ◽  
L. Ley
Keyword(s):  
Band Gap ◽  
Surface Band ◽  
Gap States

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

2004 ◽  
Vol 95 (3) ◽  
pp. 1134-1140 ◽  
Author(s):  
Michael Y. L. Jung ◽  
Rudiyanto Gunawan ◽  
Richard D. Braatz ◽  
E. G. Seebauer
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Near Surface ◽  
Dopant Profiles ◽  
Ion Implanted

The origin and nature of silicon band‐gap states at the Si/SiO2interface

1981 ◽  
Vol 38 (11) ◽  
pp. 884-886 ◽  
Author(s):  
J. Singh ◽  
A. Madhukar
Keyword(s):  
Band Gap ◽  
Gap States

Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)

1986 ◽  
Vol 56 (26) ◽  
pp. 2846-2849 ◽  
Author(s):  
R. Haight ◽  
J. Bokor
Keyword(s):  
Band Gap ◽  
Direct Observation ◽  
Gap States
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