Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

1988 ◽  
Vol 38 (15) ◽  
pp. 10571-10577 ◽  
Author(s):  
G. Ji ◽  
S. Agarwala ◽  
D. Huang ◽  
J. Chyi ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Structure of CdTe‐Cd1−xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy

1989 ◽  
Vol 55 (13) ◽  
pp. 1303-1305 ◽  
Author(s):  
G. M. Williams ◽  
A. G. Cullis ◽  
C. R. Whitehouse ◽  
D. E. Ashenford ◽  
B. Lunn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

2018 ◽  
Vol 11 (9) ◽  
pp. 091003 ◽  
Author(s):  
Valentin N. Jmerik ◽  
Dmitrii V. Nechaev ◽  
Alexey A. Toropov ◽  
Evgenii A. Evropeitsev ◽  
Vladimir I. Kozlovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

2015 ◽  
Vol 107 (26) ◽  
pp. 262102 ◽  
Author(s):  
F. Oliveira ◽  
I. A. Fischer ◽  
A. Benedetti ◽  
P. Zaumseil ◽  
M. F. Cerqueira ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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