Composition dependence of longitudinal optical phonon modes inCdxHg1−xTe with 0.5≤x≤1

1988 ◽  
Vol 38 (14) ◽  
pp. 10064-10066 ◽  
Author(s):  
A. Lusson ◽  
J. Wagner
Keyword(s):  
Optical Phonon ◽  
Composition Dependence ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Relaxation Times ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Optical Phonon Scattering ◽  
Electron Phonon Scattering

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using μ-Raman Spectroscopy

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4363
Author(s):  
Jeung Hun Park ◽  
Richard S. Kim ◽  
Se-Jeong Park ◽  
Gye-Choon Park ◽  
Choong-Heui Chung
Keyword(s):  
Raman Spectroscopy ◽  
Dose Rate ◽  
Raman Spectra ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Transverse Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Gaas Nanowires ◽  
Beam Dose

We report the relation between the catalyst patterning conditions and the intensity of the 1st order Raman active modes in Au-catalyzed GaAs nanowire bundles. We fabricated e-beam lithographically Au-patterned GaAs(111)B substrates by varying the patterning conditions (e-beam dose rate, dot-size and interdot-spacings), and grew GaAs nanowires via vapor–liquid–solid process using a solid-source molecular beam epitaxy. To understand the effects of the substrate preparation conditions and resulting morphologies on the optical characteristics of 1st order transverse optical and longitudinal optical phonon modes of GaAs, we characterized the nanowire bundles using complementary μ-Raman spectroscopy and scanning electron microscopy as a function of the e-beam dose rate (145–595 μC/cm2), inter-dot spacing (100 and 150 nm) and pattern size (100 and 150 nm). Ensembles of single crystalline GaAs nanowires covered with different Au-thickness exhibit a downshift and asymmetric broadening of the 1st order transverse optical and longitudinal optical phonon peaks relative to GaAs bulk modes. We also showed that the sensitivity of a downshift and broadening of Raman spectra are directly related to morphological and surface coverage variations in as-grown nanowires. We observed clear increases of the transverse optical and longitudinal optical intensity as well as the relatively higher peak shift and broadening of Raman spectra from the 100 nm patterning in response to the dose rate change. Strong dependence of Raman spectra of the nanowire bundles on the e-beam dose rate changes are attributed to the variations in spatial density, size, shape and random growth orientation of the wires. We have shown that the identification of the changes in GaAs longitudinal optical and Arsenic anti-site peaks is good indicators to characterize the quality of as-grown GaAs nanowires. Our finding confirms the utilization of Raman spectroscopy as a powerful tool for characterizing chemical, structural, and morphological information of as-grown nanowires within the supporting substrate.

Effects of two longitudinal optical‐phonon modes on electron distribution in GaxIn1−xAsyP1−y

1982 ◽  
Vol 40 (9) ◽  
pp. 836-838 ◽  
Author(s):  
Yoshikazu Takeda ◽  
M. A. Littlejohn ◽  
R. J. Trew ◽  
J. A. Hutchby
Keyword(s):  
Optical Phonon ◽  
Electron Distribution ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes

Electron–Interface–Phonon Interaction and Magnetopolaronic Impurity Transitions in Quantum Wells

1997 ◽  
Vol 11 (08) ◽  
pp. 991-1008 ◽  
Author(s):  
R. Chen ◽  
D. L. Lin
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Transition Energy ◽  
Bulk Sample ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Double Heterostructure

The polaronic effect on the hydrogenic 1s–2p+ transition energy of a donor impurity located at the quantum well center in a double heterostructure is studied theoretically in detail. The electron–optical–phonon interaction Hamiltonian is derived on the basis of eigenmodes of lattice vibrations supported by the double heterostructure. Both the confined and interface phonon modes are included in the electron–phonon coupling. The transition energy is calculated as a function of the applied magnetic field for GaAs/Al 1-x Ga x As samples of well -widths d=125 Å, 210 Å and 450 Å by the second-order perturbation. Wide transition gaps are predicted around the two-level and three-level resonances for all three cases. It is found that the transition gap narrows with the increasing well-width but remains larger than the LO and TO phonon frequency difference for d=450 Å as is observed. We also perform the same calculation by assuming that the confined electron interacts with three-dimensional and two-dimensional phonon modes. The transition energy spectra from these calculations appear to be similar to those for a bulk sample, the spectrum splits at the resonance with the longitudinal optical phonon frequency only. From comparisons of our results with these calculations as well as with experiments, it is conclusively established that the wide gap of transition energy is solely due to the interface modes.

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