Susceptibility of Si:P across the metal-insulator transition. II. Evidence for local moments in the metallic phase

1988 ◽  
Vol 37 (10) ◽  
pp. 5531-5534 ◽  
Author(s):  
A. Roy ◽  
M. P. Sarachik
Keyword(s):  
Metallic Phase ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Local Moments

METAL-INSULATOR TRANSITION AND FRÖHLICH CONDUCTIVITY IN THE SU-SCHRIEFFER-HEEGER MODEL

1996 ◽  
Vol 10 (18) ◽  
pp. 855-861 ◽  
Author(s):  
KRISTEL MICHIELSEN ◽  
HANS DE RAEDT
Keyword(s):  
Particle Density ◽  
Metallic Phase ◽  
Insulator Transition ◽  
Quantum Molecular Dynamics ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Single Particle Density ◽  
Half Filling ◽  
Drude Weight ◽  
Ssh Model

A quantum molecular dynamics technique is used to study the single-particle density of states, Drude weight, optical conductivity and flux quantization in the Su-Schrieffer-Heeger (SSH) model. Our simulation data show that the SSH model has a metal-insulator transition away from half-filling. In the metallic phase the electron transport is collective and shows the features characteristic of Fröhlich conductivity.

Phase transformation induced modulation of the resonance frequency of VO2/tio2 coated microcantilevers

MRS Advances ◽  
2018 ◽  
Vol 3 (6-7) ◽  
pp. 359-364 ◽  
Author(s):  
Ryan McGee ◽  
Ankur Goswami ◽  
Rosmi Abraham ◽  
Syed Bukhari ◽  
Thomas Thundat
Keyword(s):  
Tensile Stress ◽  
Resonance Frequency ◽  
Mechanical Response ◽  
Electrical Response ◽  
Deposition Process ◽  
Metallic Phase ◽  
Insulator Transition ◽  
Detection Methods ◽  
Metal Insulator Transition ◽  
Metal Insulator

AbstractHere we present an investigation into the phase change mechanism and detection methods of the metal-insulator transition of vanadium dioxide (VO2). We are able to detect the onset of the phase transition, and track it to completion using both the mechanical and electrical response by depositing VO2/TiO2 layers onto microcantilever devices by pulsed laser deposition. The resonance frequency of v-shaped cantilevers was shown to increase by up to 41 % upon deposition of VO2 as detected by laser Doppler vibrometry. Such a large increase in resonance frequency is ascribed to high tensile stress imparted onto the cantilever during the deposition process. The insulator-metal transition manifested as a 5 % increase in the resonance frequency as a result of lattice compression, resulting in additional tensile stress in the more ordered metallic phase. Electrically, the transition was confirmed by over three orders magnitude decrease in resistance upon heating past the transition. The metal-insulator transition was measured with an accuracy of a few °C when comparing the two methods, however, the transition was much sharper in the mechanical response.

Simultaneous Spectroscopic, Diffraction and Microscopic Study of the Metal-Insulator Transition of VO2

2015 ◽  
Vol 1730 ◽  
Author(s):  
J. Laverock ◽  
S. Kittiwatanakul ◽  
A. A. Zakharov ◽  
Y. R. Niu ◽  
B. Chen ◽  
...  
Keyword(s):  
Microscopic Study ◽  
Metallic Phase ◽  
Insulator Transition ◽  
Low Energy ◽  
Energy Electron ◽  
Electron Microscopic ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Rutile Structure ◽  
Low Energy Electron

ABSTRACTWe present a simultaneous photoemission spectroscopic, low-energy electron diffraction and low-energy electron microscopic study of the metal-insulator transition of strained VO2. The fraction of rutile structure is extracted from the microscopic measurements throughout the transition, and compared with the fraction of the metallic electrons from photoemission data. We find that at intermediate temperatures, while the system is predominantly monoclinic-like in structure, the electronic component of the transition is much further advanced. Our results provide direct evidence for a monoclinic-like metallic phase of VO2 that is easily accessible at ambient temperatures and pressures.

Isostructural metal-insulator transition in VO2

Science ◽  
2018 ◽  
Vol 362 (6418) ◽  
pp. 1037-1040 ◽  
Author(s):  
D. Lee ◽  
B. Chung ◽  
Y. Shi ◽  
G.-Y. Kim ◽  
N. Campbell ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Structural Phase ◽  
Basic Mechanism ◽  
Metallic Phase ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Epitaxial Heterostructures ◽  
Film Synthesis ◽  
Electrical Characterizations

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

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