Reply to ‘‘Comment on ‘Determination of valence-band discontinuity via optical transitions in ultrathin quantum wells’ ’’

1988 ◽  
Vol 37 (3) ◽  
pp. 1408-1410 ◽  
Author(s):  
Kai Shum ◽  
C. Zhang ◽  
P. P. Ho ◽  
R. R. Alfano
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Transitions ◽  
Valence Band Discontinuity

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

Photoelectric-Yield Studies of c-Si/a-Si:H Interfaces

1995 ◽  
Vol 377 ◽  
Author(s):  
M. Sebastiani ◽  
L. Di Gaspare ◽  
C. Bittencourt ◽  
F. Evangelisti
Keyword(s):  
Valence Band ◽  
Precise Determination ◽  
Spectroscopy Study ◽  
Final State ◽  
A Value ◽  
Valence Band Discontinuity

ABSTRACTWe report the first yield spectroscopy study on well characterized c-Si/a-Si:H heterojunctions grown in situ under UHV conditions. We find that this spectroscopy, when operated in the constant final state mode, allows a direct and precise determination of the valence-band discontinuity at the interface. A value of δEv = 0.44 ± 0.02 eV was found for the discontinuity.

X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity

1986 ◽  
Vol 49 (16) ◽  
pp. 1037-1039 ◽  
Author(s):  
G. J. Gualtieri ◽  
G. P. Schwartz ◽  
R. G. Nuzzo ◽  
W. A. Sunder
Keyword(s):  
Valence Band ◽  
Core Level ◽  
X Ray ◽  
Valence Band Discontinuity

Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells

2011 ◽  
Vol 50 (5S2) ◽  
pp. 05FH03 ◽  
Author(s):  
Mutsumi Sugiyama ◽  
Yoshitsuna Murata ◽  
Tsubasa Shimizu ◽  
Kottadi Ramya ◽  
Chinna Venkataiah ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Experimental Determination ◽  
Valence Band ◽  
Sns Thin Films ◽  
Valence Band Discontinuity
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