Resistive transition and magnetic field response of a Penrose-tile array of weakly coupled superconductor islands

1987 ◽  
Vol 36 (13) ◽  
pp. 7273-7276 ◽  
Author(s):  
K. N. Springer ◽  
D. J. Van Harlingen
Keyword(s):  
Magnetic Field ◽  
Resistive Transition ◽  
Weakly Coupled ◽  
Field Response

Low Magnetic Field Response of 2d-Array of Weakly Coupled Ferromagnets

1999 ◽  
Vol 574 ◽  
Author(s):  
Z. G. Ivanov ◽  
R. A. Chakalov ◽  
T. Claeson
Keyword(s):  
Magnetic Field ◽  
Grain Boundaries ◽  
Buffer Layer ◽  
Seed Layer ◽  
Substrate Surface ◽  
X Ray Diffraction ◽  
Weakly Coupled ◽  
Field Response ◽  
Low Magnetic Field ◽  
2D Array

AbstractWe demonstrated a low magnetic field response in 2D array of weakly coupled ferromagnets created by bi-epitaxial growth of La0.7Sr0.3MnO3 film on multilayer template of MgO seed and CeO2 buffer layer deposited on SrTiO3 substrate. To form the array we etched the MgO seed layer into a chess board pattern. The chess board fields, where the substrate surface is disclosed, initiate a 45° in-plate rotated growth of the CeO2 buffer layer while it does not rotate on the neighboring fields covered by MgO seed layer. The La0.7Sr0.3MnO3 film inherits the template orientation of the buffer layer forming misoriented at 45° domains and a well defined 2D array of 45° grain boundaries is created. The size of the domains, correspondingly the number of grain boundaries, can be varied by changing the dimensions of the chess board fields. The multilayer structures were investigated by θ–2θ and φ-scan x-ray diffraction. A magnetoresistance of 25% by 0.5 T was measured and ascribed to the properties of the 2D array of grain boundaries.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Magnetic field dependent width of the resistive transition in superconducting Bi1.6Pb0.4Sr2Ca2Cu3Oy

1991 ◽  
Vol 78 (6) ◽  
pp. 515-518 ◽  
Author(s):  
Vladimir V. Gridin ◽  
Thomas W. Krause ◽  
P.K. Ummat ◽  
W.R. Datars
Keyword(s):  
Magnetic Field ◽  
Resistive Transition ◽  
Field Dependent

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced ‘memory effect’

2009 ◽  
Vol 42 (14) ◽  
pp. 145109 ◽  
Author(s):  
W H M Feu ◽  
J M Villas-Bôas ◽  
L A Cury ◽  
P S S Guimarães ◽  
G S Vieira ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Memory Effect ◽  
Quantum Well Structure ◽  
Weakly Coupled ◽  
Multi Quantum Well

Effect of magnetic field on the resistive transition and critical current density of Y-Ba-Cu-O/Ag rolled tapes

1991 ◽  
Author(s):  
G. Swaminathan ◽  
S. Rajendra Kumar ◽  
N. Ramadas ◽  
K. Venugopal ◽  
K. A. Durga Prasad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Resistive Transition
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